AP10TN135N PDF and Equivalents Search

 

AP10TN135N Specs and Replacement

Type Designator: AP10TN135N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm

Package: SOT23

AP10TN135N substitution

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AP10TN135N datasheet

 ..1. Size:188K  ape
 ap10tn135n.pdf pdf_icon

AP10TN135N

AP10TN135N Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Fast Switching Characteristic RDS(ON) 135m Low Gate Charge ID 3A S RoHS Compliant & Halogen-Free SOT-23 G Description D AP10TN135 series are from Advanced Power innovated design and silicon process technology to achieve the... See More ⇒

 5.1. Size:201K  ape
 ap10tn135h.pdf pdf_icon

AP10TN135N

AP10TN135H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1A G RoHS Compliant & Halogen-Free S Description G AP10TN135 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology... See More ⇒

 5.2. Size:222K  ape
 ap10tn135m.pdf pdf_icon

AP10TN135N

AP10TN135M Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D D Fast Switching Characteristic D RDS(ON) 135m D Low Gate Charge ID 3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP10TN135 series are from Advanced Power innovated design and silicon process technology t... See More ⇒

 5.3. Size:166K  ape
 ap10tn135j.pdf pdf_icon

AP10TN135N

AP10TN135J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1A G RoHS Compliant & Halogen-Free S Description AP10TN135 series are from Advanced Power innovated design and G D S silicon process technology to achieve... See More ⇒

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Detailed specifications: AP6N090K, AP6N090LK, AP6P250K, AP04N20GK, APA2N70K, AP18P10GK, AP70SL1K4BK2, AP10P500N, IRLZ44N, AP2302AGN, AP2304AGN, AP2304GN, AP2306AGEN, AP2316GN, AP2323AGN, AP2323GN, AP2326GN

Keywords - AP10TN135N MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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