AP10TN135N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP10TN135N
Маркировка: A04SS
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.38 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 3 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 12 nC
Время нарастания (tr): 5 ns
Выходная емкость (Cd): 40 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.135 Ohm
Тип корпуса: SOT23
Аналог (замена) для AP10TN135N
AP10TN135N Datasheet (PDF)
ap10tn135n.pdf
AP10TN135NHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Fast Switching Characteristic RDS(ON) 135m Low Gate Charge ID 3AS RoHS Compliant & Halogen-FreeSOT-23 GDescription DAP10TN135 series are from Advanced Power innovated designand silicon process technology to achieve the
ap10tn135h.pdf
AP10TN135HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1AG RoHS Compliant & Halogen-FreeSDescriptionGAP10TN135 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology
ap10tn135m.pdf
AP10TN135MHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VDD Fast Switching Characteristic D RDS(ON) 135mD Low Gate Charge ID 3AGS RoHS Compliant & Halogen-FreeSSSO-8Description DAP10TN135 series are from Advanced Power innovated designand silicon process technology t
ap10tn135j.pdf
AP10TN135JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1AG RoHS Compliant & Halogen-FreeSDescriptionAP10TN135 series are from Advanced Power innovated design andGDSsilicon process technology to achieve
ap10tn135k.pdf
AP10TN135KHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 135m Fast Switching Characteristic ID 3AG Halogen Free & RoHS Compliant ProductSDescriptionDAP10TN135 series are from Advanced Power innovated designand silicon process technology to achieve
ap10tn135p.pdf
AP10TN135PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1AG RoHS Compliant & Halogen-FreeSDescriptionAP10TN135 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe
ap10tn135jb.pdf
AP10TN135JBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1AG RoHS Compliant & Halogen-FreeSDescriptionAP10TN135 series are from Advanced Power innovated design andsilicon process technology to achieve the low
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