AP2306AGEN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2306AGEN
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.38 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
|Id|ⓘ - Corriente continua de drenaje: 4.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 130 nS
Cossⓘ - Capacitancia de salida: 60 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de AP2306AGEN MOSFET
AP2306AGEN Datasheet (PDF)
ap2306agen.pdf

AP2306AGEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 50m Surface Mount Device ID 4.1AS RoHS Compliant & Halogen-FreeSOT-23 GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toDachieve the lowest possible on-res
ap2306agen-hf.pdf

AP2306AGEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 50m Surface Mount Device ID 4.1AS RoHS Compliant & Halogen-FreeSOT-23 GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toDachieve the lowest possible on-res
ap2306agn-hf.pdf

AP2306AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 30V Lower on-resistance D RDS(ON) 35m Surface mount package ID 5A RoHS CompliantSDSOT-23GDescriptionAdvanced Power MOSFETs utilized advanced processing techniquesGto achieve the lowest possible on-resistance, extreme
ap2306agn.pdf

AP2306AGNwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)
Otros transistores... APA2N70K , AP18P10GK , AP70SL1K4BK2 , AP10P500N , AP10TN135N , AP2302AGN , AP2304AGN , AP2304GN , IRF3710 , AP2316GN , AP2323AGN , AP2323GN , AP2326GN , AP2328GN , AP2330GN , AP2338GN , AP2344GN .
History: FDM6296 | 2SJ595 | DMN4060SVT-7 | BSC094N03SG | 1481 | TDM3408 | NCE6602N
History: FDM6296 | 2SJ595 | DMN4060SVT-7 | BSC094N03SG | 1481 | TDM3408 | NCE6602N



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