AP2306AGEN PDF and Equivalents Search

 

AP2306AGEN Specs and Replacement

Type Designator: AP2306AGEN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT23

AP2306AGEN substitution

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AP2306AGEN datasheet

 ..1. Size:179K  ape
ap2306agen.pdf pdf_icon

AP2306AGEN

AP2306AGEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 50m Surface Mount Device ID 4.1A S RoHS Compliant & Halogen-Free SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to D achieve the lowest possible on-res... See More ⇒

 0.1. Size:95K  ape
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AP2306AGEN

AP2306AGEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 50m Surface Mount Device ID 4.1A S RoHS Compliant & Halogen-Free SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to D achieve the lowest possible on-res... See More ⇒

 6.1. Size:106K  ape
ap2306agn-hf.pdf pdf_icon

AP2306AGEN

AP2306AGN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 30V Lower on-resistance D RDS(ON) 35m Surface mount package ID 5A RoHS Compliant S D SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques G to achieve the lowest possible on-resistance, extreme... See More ⇒

 6.2. Size:848K  cn vbsemi
ap2306agn.pdf pdf_icon

AP2306AGEN

AP2306AGN www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) ... See More ⇒

Detailed specifications: APA2N70K, AP18P10GK, AP70SL1K4BK2, AP10P500N, AP10TN135N, AP2302AGN, AP2304AGN, AP2304GN, AO3400, AP2316GN, AP2323AGN, AP2323GN, AP2326GN, AP2328GN, AP2330GN, AP2338GN, AP2344GN

Keywords - AP2306AGEN MOSFET specs

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