AP2338GN Todos los transistores

 

AP2338GN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2338GN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: SOT23

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AP2338GN datasheet

 ..1. Size:177K  ape
ap2338gn.pdf pdf_icon

AP2338GN

AP2338GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 35m Surface Mount Device ID 5A S Halogen Free & RoHS Compliant Product SOT-23 G D Description AP2338 series are from Advanced Power innovated design and silicon process technology to achieve

 0.1. Size:95K  ape
ap2338gn-hf.pdf pdf_icon

AP2338GN

AP2338GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 35m Surface Mount Device ID 5A S Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on

 9.1. Size:175K  ape
ap2330gn.pdf pdf_icon

AP2338GN

AP2330GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 90V Small Package Outline RDS(ON) 240m Surface Mount Device ID 1.7A G RoHS Compliant & Halogen-Free S D Description AP2330 series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos

 9.2. Size:93K  ape
ap2336gn-hf.pdf pdf_icon

AP2338GN

AP2336GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Small Package Outline RDS(ON) 90m Surface Mount Device ID 2.8A G RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, ext

Otros transistores... AP2304GN , AP2306AGEN , AP2316GN , AP2323AGN , AP2323GN , AP2326GN , AP2328GN , AP2330GN , P55NF06 , AP2344GN , AP2346GN , AP5600N , AP60PN72REN , AP60PN72RLEN , AP15TN1R5N , AP2309GEN , AP2321GN .

History: AP2316GN

 

 

 


History: AP2316GN

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