AP2338GN Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP2338GN
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.38 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 80 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
Тип корпуса: SOT23
- подбор MOSFET транзистора по параметрам
AP2338GN Datasheet (PDF)
ap2338gn.pdf

AP2338GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 35m Surface Mount Device ID 5AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAP2338 series are from Advanced Power innovated design andsilicon process technology to achieve
ap2338gn-hf.pdf

AP2338GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 35m Surface Mount Device ID 5AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on
ap2330gn.pdf

AP2330GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 90V Small Package Outline RDS(ON) 240m Surface Mount Device ID 1.7AG RoHS Compliant & Halogen-FreeSDDescriptionAP2330 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest pos
ap2336gn-hf.pdf

AP2336GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Small Package Outline RDS(ON) 90m Surface Mount Device ID 2.8AG RoHS Compliant & Halogen-FreeSDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, ext
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History: ITF87068SQT | SVF1N60AM | IPD50R280CE | WSF45P06 | BR13N50 | NDT6N70 | BRCS200P012ZJ
History: ITF87068SQT | SVF1N60AM | IPD50R280CE | WSF45P06 | BR13N50 | NDT6N70 | BRCS200P012ZJ



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