AP2338GN Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP2338GN
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1.38 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 80 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
Тип корпуса: SOT23
Аналог (замена) для AP2338GN
AP2338GN Datasheet (PDF)
ap2338gn.pdf

AP2338GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 35m Surface Mount Device ID 5AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAP2338 series are from Advanced Power innovated design andsilicon process technology to achieve
ap2338gn-hf.pdf

AP2338GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 35m Surface Mount Device ID 5AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on
ap2330gn.pdf

AP2330GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 90V Small Package Outline RDS(ON) 240m Surface Mount Device ID 1.7AG RoHS Compliant & Halogen-FreeSDDescriptionAP2330 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest pos
ap2336gn-hf.pdf

AP2336GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Small Package Outline RDS(ON) 90m Surface Mount Device ID 2.8AG RoHS Compliant & Halogen-FreeSDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, ext
Другие MOSFET... AP2304GN , AP2306AGEN , AP2316GN , AP2323AGN , AP2323GN , AP2326GN , AP2328GN , AP2330GN , IRFB4115 , AP2344GN , AP2346GN , AP5600N , AP60PN72REN , AP60PN72RLEN , AP15TN1R5N , AP2309GEN , AP2321GN .
History: TPA65R940C | JCS13AN50BC | ZXMN10A08DN8 | 2SK321 | SI4401BDY
History: TPA65R940C | JCS13AN50BC | ZXMN10A08DN8 | 2SK321 | SI4401BDY



Список транзисторов
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