AP2338GN MOSFET Datasheet: N-Ch, 30V, 5A. Full specification with pinout and replacement list

AP2338GN Specs and Replacement

Type Designator: AP2338GN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SOT23

AP2338GN substitution

- MOSFET ⓘ Cross-Reference Search

AP2338GN datasheet

..1. Size:177K ape
ap2338gn.pdf pdf_icon

AP2338GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 35m Surface Mount Device ID 5A S Halogen Free & RoHS Compliant Product SOT-23 G D Description AP2338 series are from Advanced Power innovated design and silicon process technology to achieve... See More ⇒

0.1. Size:95K ape
ap2338gn-hf.pdf pdf_icon

AP2338GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 35m Surface Mount Device ID 5A S Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on... See More ⇒

9.1. Size:175K ape
ap2330gn.pdf pdf_icon

AP2330GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 90V Small Package Outline RDS(ON) 240m Surface Mount Device ID 1.7A G RoHS Compliant & Halogen-Free S D Description AP2330 series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos... See More ⇒

9.2. Size:93K ape
ap2336gn-hf.pdf pdf_icon

AP2336GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Small Package Outline RDS(ON) 90m Surface Mount Device ID 2.8A G RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, ext... See More ⇒