AP2320GN Todos los transistores

 

AP2320GN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2320GN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 9.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: SOT23S
 

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AP2320GN Datasheet (PDF)

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AP2320GN

AP2320GNHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2320 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

 0.1. Size:54K  ape
ap2320gn-hf.pdf pdf_icon

AP2320GN

AP2320GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processingtechniques to achieve the lowest possible on-resist

 8.1. Size:55K  ape
ap2320n-hf.pdf pdf_icon

AP2320GN

AP2320N-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2320 series are from Advanced Power innovated design andsilicon process technology to achieve the lo

 9.1. Size:94K  ape
ap2328gn-hf.pdf pdf_icon

AP2320GN

AP2328GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 60m Surface Mount Device ID 4AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible

Otros transistores... AP3N045EN , AP3P080N , AP3P090N , AP6N090N , AP6P250N , AP2301EN , AP2314GN , AP2318GEN , IRLZ44N , AP6N2K0EN , AP2308GEN , AP2318BEN , AP15TP1R0Y , AP2604GY , AP2615GEY , AP2617GY , AP2N030EY .

History: NTB18N06G | IRF034 | BUK9K35-60E

 

 
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