AP2320GN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2320GN
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 9.5 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Paquete / Cubierta: SOT23S
Búsqueda de reemplazo de AP2320GN MOSFET
AP2320GN Datasheet (PDF)
ap2320gn.pdf
AP2320GNHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2320 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe
ap2320gn-hf.pdf
AP2320GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processingtechniques to achieve the lowest possible on-resist
ap2320n-hf.pdf
AP2320N-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2320 series are from Advanced Power innovated design andsilicon process technology to achieve the lo
ap2320mi.pdf
AP2320MI 20V N-Channel Enhancement Mode MOSFET Description The AP2320MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =8A DS DR
Otros transistores... AP3N045EN , AP3P080N , AP3P090N , AP6N090N , AP6P250N , AP2301EN , AP2314GN , AP2318GEN , AON6380 , AP6N2K0EN , AP2308GEN , AP2318BEN , AP15TP1R0Y , AP2604GY , AP2615GEY , AP2617GY , AP2N030EY .
History: PDS3807 | PDS4906 | VB7638 | UM6J1N | HIRF730 | IRLML6344GT
History: PDS3807 | PDS4906 | VB7638 | UM6J1N | HIRF730 | IRLML6344GT
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