AP2320GN MOSFET Datasheet: N-Ch, 100V, 0.25A. Full specification with pinout and replacement list

AP2320GN Specs and Replacement

Type Designator: AP2320GN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 9.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: SOT23S

AP2320GN substitution

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AP2320GN datasheet

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AP2320GN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2320 series are from Advanced Power innovated design and silicon process technology to achieve the lowe... See More ⇒

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ap2320gn-hf.pdf pdf_icon

AP2320GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resist... See More ⇒

8.1. Size:55K ape
ap2320n-hf.pdf pdf_icon

AP2320N-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2320 series are from Advanced Power innovated design and silicon process technology to achieve the lo... See More ⇒

8.2. Size:1420K cn apm
ap2320mi.pdf pdf_icon

AP2320MI 20V N-Channel Enhancement Mode MOSFET Description The AP2320MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =8A DS D R ... See More ⇒

Detailed specifications: AP3N045EN, AP3P080N, AP3P090N, AP6N090N, AP6P250N, AP2301EN, AP2314GN, AP2318GEN, AON6380, AP6N2K0EN, AP2308GEN, AP2318BEN, AP15TP1R0Y, AP2604GY, AP2615GEY, AP2617GY, AP2N030EY