AP2P052Y MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2P052Y
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 5.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
Paquete / Cubierta: SOT26
Búsqueda de reemplazo de AP2P052Y MOSFET
AP2P052Y Datasheet (PDF)
ap2p052y.pdf

AP2P052YHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 52mD Surface Mount Device ID -5.1AGD RoHS Compliant & Halogen-FreeSOT-26DDDescriptionAP2P052 series are from Advanced Power innovated design and siliconprocess technology to ach
ap2p052n.pdf

AP2P052NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 52m Surface Mount Device ID3 -4AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2P052 series are from Advanced Power innovated designand silicon process technology to achieve the
ap2p053n.pdf

AP2P053NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 65m Surface Mount Device ID3 -4.2AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2P053 series are from Advanced Power innovated designand silicon process technology to achieve th
ap2p028em.pdf

AP2P028EMHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VDDD ESD Diode Protected RDS(ON) 28mD Suit for USB Type-C Application ID -7AGS RoHS Compliant & Halogen-Free HBM ESD 8KVSSSO-8DescriptionDAP2P028E series are from Advanced Power innovated designand silicon
Otros transistores... AP6N2K0EN , AP2308GEN , AP2318BEN , AP15TP1R0Y , AP2604GY , AP2615GEY , AP2617GY , AP2N030EY , 18N50 , AP3N028EY , AP6N090Y , AP2906EY , AP2626GY , AP2530GY , AP2530AGY , AP4C205Y , AP2535GEY .
History: PDP0959 | MTN8N50E3 | ME95N03T | GM2302 | AO4800 | AON7518 | IPB77N06S2-12
History: PDP0959 | MTN8N50E3 | ME95N03T | GM2302 | AO4800 | AON7518 | IPB77N06S2-12



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