AP2P052Y Todos los transistores

 

AP2P052Y MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2P052Y

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 5.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm

Encapsulados: SOT26

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AP2P052Y datasheet

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AP2P052Y

AP2P052Y Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Capable of 1.8V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 52m D Surface Mount Device ID -5.1A G D RoHS Compliant & Halogen-Free SOT-26 D D Description AP2P052 series are from Advanced Power innovated design and silicon process technology to ach

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 ap2p052n.pdf pdf_icon

AP2P052Y

AP2P052N Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 52m Surface Mount Device ID3 -4A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2P052 series are from Advanced Power innovated design and silicon process technology to achieve the

 8.1. Size:189K  ape
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AP2P052Y

AP2P053N Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 65m Surface Mount Device ID3 -4.2A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2P053 series are from Advanced Power innovated design and silicon process technology to achieve th

 9.1. Size:186K  ape
 ap2p028em.pdf pdf_icon

AP2P052Y

AP2P028EM Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20V D D D ESD Diode Protected RDS(ON) 28m D Suit for USB Type-C Application ID -7A G S RoHS Compliant & Halogen-Free HBM ESD 8KV S S SO-8 Description D AP2P028E series are from Advanced Power innovated design and silicon

MOSTRAR MÁS

Otros transistores... AP6N2K0EN , AP2308GEN , AP2318BEN , AP15TP1R0Y , AP2604GY , AP2615GEY , AP2617GY , AP2N030EY , BS170 , AP3N028EY , AP6N090Y , AP2906EY , AP2626GY , AP2530GY , AP2530AGY , AP4C205Y , AP2535GEY .

History: AP9992GR

 

 

 

 

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