All MOSFET. AP2P052Y Datasheet

 

AP2P052Y MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP2P052Y
   Marking Code: Z06SS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: SOT26

 AP2P052Y Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP2P052Y Datasheet (PDF)

 ..1. Size:176K  ape
 ap2p052y.pdf

AP2P052Y AP2P052Y

AP2P052YHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 52mD Surface Mount Device ID -5.1AGD RoHS Compliant & Halogen-FreeSOT-26DDDescriptionAP2P052 series are from Advanced Power innovated design and siliconprocess technology to ach

 7.1. Size:156K  ape
 ap2p052n.pdf

AP2P052Y AP2P052Y

AP2P052NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 52m Surface Mount Device ID3 -4AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2P052 series are from Advanced Power innovated designand silicon process technology to achieve the

 8.1. Size:189K  ape
 ap2p053n.pdf

AP2P052Y AP2P052Y

AP2P053NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 65m Surface Mount Device ID3 -4.2AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2P053 series are from Advanced Power innovated designand silicon process technology to achieve th

 9.1. Size:186K  ape
 ap2p028em.pdf

AP2P052Y AP2P052Y

AP2P028EMHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VDDD ESD Diode Protected RDS(ON) 28mD Suit for USB Type-C Application ID -7AGS RoHS Compliant & Halogen-Free HBM ESD 8KVSSSO-8DescriptionDAP2P028E series are from Advanced Power innovated designand silicon

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SM1A16PUB

 

 
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