All MOSFET. AP2P052Y Datasheet

 

AP2P052Y Datasheet and Replacement


   Type Designator: AP2P052Y
   Marking Code: Z06SS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 5.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9 nC
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: SOT26
 

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AP2P052Y Datasheet (PDF)

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AP2P052Y

AP2P052YHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 52mD Surface Mount Device ID -5.1AGD RoHS Compliant & Halogen-FreeSOT-26DDDescriptionAP2P052 series are from Advanced Power innovated design and siliconprocess technology to ach

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 ap2p052n.pdf pdf_icon

AP2P052Y

AP2P052NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 52m Surface Mount Device ID3 -4AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2P052 series are from Advanced Power innovated designand silicon process technology to achieve the

 8.1. Size:189K  ape
 ap2p053n.pdf pdf_icon

AP2P052Y

AP2P053NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 65m Surface Mount Device ID3 -4.2AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2P053 series are from Advanced Power innovated designand silicon process technology to achieve th

 9.1. Size:186K  ape
 ap2p028em.pdf pdf_icon

AP2P052Y

AP2P028EMHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VDDD ESD Diode Protected RDS(ON) 28mD Suit for USB Type-C Application ID -7AGS RoHS Compliant & Halogen-Free HBM ESD 8KVSSSO-8DescriptionDAP2P028E series are from Advanced Power innovated designand silicon

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Datasheet: AP6N2K0EN , AP2308GEN , AP2318BEN , AP15TP1R0Y , AP2604GY , AP2615GEY , AP2617GY , AP2N030EY , 18N50 , AP3N028EY , AP6N090Y , AP2906EY , AP2626GY , AP2530GY , AP2530AGY , AP4C205Y , AP2535GEY .

History: RJJ0601JPN

Keywords - AP2P052Y MOSFET datasheet

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