Справочник MOSFET. AP2P052Y

 

AP2P052Y MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP2P052Y
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.052 Ohm
   Тип корпуса: SOT26

 Аналог (замена) для AP2P052Y

 

 

AP2P052Y Datasheet (PDF)

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 ap2p052y.pdf

AP2P052Y AP2P052Y

AP2P052YHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 52mD Surface Mount Device ID -5.1AGD RoHS Compliant & Halogen-FreeSOT-26DDDescriptionAP2P052 series are from Advanced Power innovated design and siliconprocess technology to ach

 7.1. Size:156K  ape
 ap2p052n.pdf

AP2P052Y AP2P052Y

AP2P052NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 52m Surface Mount Device ID3 -4AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2P052 series are from Advanced Power innovated designand silicon process technology to achieve the

 8.1. Size:189K  ape
 ap2p053n.pdf

AP2P052Y AP2P052Y

AP2P053NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 65m Surface Mount Device ID3 -4.2AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2P053 series are from Advanced Power innovated designand silicon process technology to achieve th

 9.1. Size:186K  ape
 ap2p028em.pdf

AP2P052Y AP2P052Y

AP2P028EMHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VDDD ESD Diode Protected RDS(ON) 28mD Suit for USB Type-C Application ID -7AGS RoHS Compliant & Halogen-Free HBM ESD 8KVSSSO-8DescriptionDAP2P028E series are from Advanced Power innovated designand silicon

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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