AP6N090Y MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6N090Y
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 35 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
Paquete / Cubierta: SOT26
Búsqueda de reemplazo de AP6N090Y MOSFET
AP6N090Y Datasheet (PDF)
ap6n090y.pdf

AP6N090YHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement S BVDSS 60VD Lower Gate Charge RDS(ON) 90mD Fast Switching Characteristic ID3 3.5AGD RoHS Compliant & Halogen-FreeSOT-26 DDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achi
ap6n090k.pdf

AP6N090KHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 90mS Fast Switching Characteristic ID3 4.1AD RoHS Compliant & Halogen-FreeSOT-223GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve
ap6n090g.pdf

AP6N090GHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7AS RoHS Compliant & Halogen-FreeDSOT-89GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve the
ap6n090n.pdf

AP6N090NHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 90m Surface Mount Device ID 2.5AS RoHS Compliant & Halogen-FreeSOT-23S GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes
Otros transistores... AP2318BEN , AP15TP1R0Y , AP2604GY , AP2615GEY , AP2617GY , AP2N030EY , AP2P052Y , AP3N028EY , STF13NM60N , AP2906EY , AP2626GY , AP2530GY , AP2530AGY , AP4C205Y , AP2535GEY , AP2622GY , AP6800EY .
History: 2SK2445 | GP1T080A120B
History: 2SK2445 | GP1T080A120B



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