AP6N090Y MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP6N090Y
Маркировка: Z07SS
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток (Uds): 60 V
Предельно допустимое напряжение затвор-исток (Ugs): 20 V
Пороговое напряжение включения Ugs(th): 3 V
Максимально допустимый постоянный ток стока (Id): 3.5 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 7 ns
Выходная емкость (Cd): 35 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.09 Ohm
Тип корпуса: SOT26
AP6N090Y Datasheet (PDF)
1.1. ap6n090y.pdf 
Size:210K _a-power
AP6N090Y Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement S BVDSS 60V D ▼ Lower Gate Charge RDS(ON) 90mΩ D ▼ Fast Switching Characteristic ID3 3.5A G D ▼ RoHS Compliant & Halogen-Free SOT-26 D Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achi
3.1. ap6n090g.pdf Size:171K _a-power
AP6N090G Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS 60V D ▼ Fast Switching Characteristic RDS(ON) 90mΩ ▼ Simple Drive Requirement ID 2.7A S ▼ RoHS Compliant & Halogen-Free D SOT-89 G Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achieve the
3.2. ap6n090k.pdf Size:178K _a-power
AP6N090K Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 60V D ▼ Lower Gate Charge RDS(ON) 90mΩ S ▼ Fast Switching Characteristic ID3 4.1A D ▼ RoHS Compliant & Halogen-Free SOT-223 G Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achieve
3.3. ap6n090n.pdf Size:188K _a-power
AP6N090N Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 60V D ▼ Small Package Outline RDS(ON) 90mΩ ▼ Surface Mount Device ID 2.5A S ▼ RoHS Compliant & Halogen-Free SOT-23S G Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achieve the lowes
Другие MOSFET... AP2318BEN , AP15TP1R0Y , AP2604GY , AP2615GEY , AP2617GY , AP2N030EY , AP2P052Y , AP3N028EY , BF245C , AP2906EY , AP2626GY , AP2530GY , AP2530AGY , AP4C205Y , AP2535GEY , AP2622GY , AP6800EY .
Список транзисторов
Обновления
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