AP6N090Y Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP6N090Y
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 35 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
Тип корпуса: SOT26
Аналог (замена) для AP6N090Y
AP6N090Y Datasheet (PDF)
ap6n090y.pdf

AP6N090YHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement S BVDSS 60VD Lower Gate Charge RDS(ON) 90mD Fast Switching Characteristic ID3 3.5AGD RoHS Compliant & Halogen-FreeSOT-26 DDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achi
ap6n090k.pdf

AP6N090KHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 90mS Fast Switching Characteristic ID3 4.1AD RoHS Compliant & Halogen-FreeSOT-223GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve
ap6n090g.pdf

AP6N090GHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7AS RoHS Compliant & Halogen-FreeDSOT-89GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve the
ap6n090n.pdf

AP6N090NHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 90m Surface Mount Device ID 2.5AS RoHS Compliant & Halogen-FreeSOT-23S GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes
Другие MOSFET... AP2318BEN , AP15TP1R0Y , AP2604GY , AP2615GEY , AP2617GY , AP2N030EY , AP2P052Y , AP3N028EY , STF13NM60N , AP2906EY , AP2626GY , AP2530GY , AP2530AGY , AP4C205Y , AP2535GEY , AP2622GY , AP6800EY .
History: AM60N04-12D | RJK03E1DNS | IPD048N06L3G | IRFS710A | 2SK3930-01L | AOK20S60
History: AM60N04-12D | RJK03E1DNS | IPD048N06L3G | IRFS710A | 2SK3930-01L | AOK20S60



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