All MOSFET. AP6N090Y Datasheet

 

AP6N090Y Datasheet and Replacement


   Type Designator: AP6N090Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SOT26
      - MOSFET Cross-Reference Search

 

AP6N090Y Datasheet (PDF)

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AP6N090Y

AP6N090YHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement S BVDSS 60VD Lower Gate Charge RDS(ON) 90mD Fast Switching Characteristic ID3 3.5AGD RoHS Compliant & Halogen-FreeSOT-26 DDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achi

 7.1. Size:178K  ape
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AP6N090Y

AP6N090KHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 90mS Fast Switching Characteristic ID3 4.1AD RoHS Compliant & Halogen-FreeSOT-223GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve

 7.2. Size:171K  ape
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AP6N090Y

AP6N090GHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7AS RoHS Compliant & Halogen-FreeDSOT-89GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve the

 7.3. Size:188K  ape
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AP6N090Y

AP6N090NHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 90m Surface Mount Device ID 2.5AS RoHS Compliant & Halogen-FreeSOT-23S GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes

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History: VBNC1303 | IRFS4010PBF

Keywords - AP6N090Y MOSFET datasheet

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