AP2626GY Todos los transistores

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 ap2626gy.pdf

AP2626GY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Simple Drive Requirement BVDSS 30V S1 D1 Smaller Outline Package RDS(ON) 72m G2 Surface mount package ID 3.3A S2 SOT-26 G1 RoHS Compliant & Halogen-Free Description AP2626 series are from Advanced Power innovated D2 D1 design and silicon process techn

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 ap2626gy-hf.pdf

AP2626GY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Simple Drive Requirement BVDSS 30V S1 D1 Smaller Outline Package RDS(ON) 72m G2 Surface mount package ID 3.3A S2 SOT-26 G1 RoHS Compliant & Halogen-Free Description Advanced Power MOSFETs utilized advanced processing techniques D2 D1 to achieve the lo

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 ap2623gy-hf.pdf

AP2623GY-HF Halogen-Free Product Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Low Gate Charge BVDSS -30V S1 D1 Low On-resistance RDS(ON) 170m G2 Surface Mount Package ID - 2A S2 RoHS Compliant & Halogen-Free SOT-26 G1 Description D2 D1 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest poss

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 ap2625gy-hf.pdf

AP2625GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Low Gate Charge BVDSS -30V S1 D1 Capable of 2.5V Gate Drive RDS(ON) 185m G2 Surface Mount Package ID - 2A S2 SOT-26 RoHS Compliant & Halogen-Free G1 Description D2 D1 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest

 9.3. Size:97K  ape
 ap2622gy-hf.pdf

AP2622GY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D1 Low Gate Charge D2 BVDSS 50V Small Package Outline RDS(ON) 1.8 G1 G2 Surface Mount Package ID 520mA RoHS Compliant S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques to S1 achieve the lowest possible on-resistance, extre

 9.4. Size:200K  ape
 ap2622gy.pdf

AP2622GY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Low Gate Charge BVDSS 50V S1 D1 Small Package Outline RDS(ON) 1.8 G2 Surface Mount Package ID 520mA S2 RoHS Compliant SOT-26 G1 Description D1 D2 AP2622 series are from Advanced Power innovated design and silicon process technology to achieve the G1 G2

 9.5. Size:97K  ape
 ap2623gy.pdf

AP2623GY RoHS-compliant Product Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS -30V D2 D1 Low On-resistance RDS(ON) 170m Surface Mount Package ID - 2A G2 G1 S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques S1 to achieve the lowest possible on-resistance, extremely efficient and

 9.6. Size:96K  ape
 ap2625gy.pdf

AP2625GY RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D2 D1 Low Gate Drive RDS(ON) 185m Surface Mount Package ID - 2A G2 G1 S2 S1 Description D2 S1 Advanced Power MOSFETs utilized advanced processing techniques D1 to achieve the lowest possible on-resistance, extremely efficient and G2