AP2626GY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2626GY
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10.1 nS
Cossⓘ - Capacitancia de salida: 50 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm
Paquete / Cubierta: SOT26
Búsqueda de reemplazo de AP2626GY MOSFET
AP2626GY Datasheet (PDF)
ap2626gy.pdf

AP2626GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2 Simple Drive Requirement BVDSS 30VS1D1 Smaller Outline Package RDS(ON) 72mG2 Surface mount package ID 3.3AS2SOT-26G1 RoHS Compliant & Halogen-FreeDescriptionAP2626 series are from Advanced Power innovatedD2D1design and silicon process techn
ap2626gy-hf.pdf

AP2626GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2 Simple Drive Requirement BVDSS 30VS1D1 Smaller Outline Package RDS(ON) 72mG2 Surface mount package ID 3.3AS2SOT-26G1 RoHS Compliant & Halogen-FreeDescriptionAdvanced Power MOSFETs utilized advanced processing techniquesD2D1to achieve the lo
ap2623gy-hf.pdf

AP2623GY-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge BVDSS -30VS1D1 Low On-resistance RDS(ON) 170mG2 Surface Mount Package ID - 2AS2 RoHS Compliant & Halogen-Free SOT-26G1DescriptionD2D1Advanced Power MOSFETs utilized advanced processingtechniques to achieve the lowest poss
ap2625gy-hf.pdf

AP2625GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2 Low Gate Charge BVDSS -30VS1D1 Capable of 2.5V Gate Drive RDS(ON) 185mG2 Surface Mount Package ID - 2AS2SOT-26 RoHS Compliant & Halogen-Free G1DescriptionD2D1Advanced Power MOSFETs utilized advanced processingtechniques to achieve the lowest
Otros transistores... AP2604GY , AP2615GEY , AP2617GY , AP2N030EY , AP2P052Y , AP3N028EY , AP6N090Y , AP2906EY , 5N65 , AP2530GY , AP2530AGY , AP4C205Y , AP2535GEY , AP2622GY , AP6800EY , AP1332GEU , AP2N7002KU .
History: IRF630FP | STN4822 | VS3640DS | IPB031NE7N3G | AOK160A60FDL | SM4606 | VBFB1630
History: IRF630FP | STN4822 | VS3640DS | IPB031NE7N3G | AOK160A60FDL | SM4606 | VBFB1630



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