AP2626GY MOSFET. Datasheet pdf. Equivalent
Type Designator: AP2626GY
Marking Code: YCSS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 3.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.2 nC
trⓘ - Rise Time: 10.1 nS
Cossⓘ - Output Capacitance: 50 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
Package: SOT26
AP2626GY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP2626GY Datasheet (PDF)
ap2626gy.pdf
AP2626GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2 Simple Drive Requirement BVDSS 30VS1D1 Smaller Outline Package RDS(ON) 72mG2 Surface mount package ID 3.3AS2SOT-26G1 RoHS Compliant & Halogen-FreeDescriptionAP2626 series are from Advanced Power innovatedD2D1design and silicon process techn
ap2626gy-hf.pdf
AP2626GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2 Simple Drive Requirement BVDSS 30VS1D1 Smaller Outline Package RDS(ON) 72mG2 Surface mount package ID 3.3AS2SOT-26G1 RoHS Compliant & Halogen-FreeDescriptionAdvanced Power MOSFETs utilized advanced processing techniquesD2D1to achieve the lo
ap2623gy-hf.pdf
AP2623GY-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge BVDSS -30VS1D1 Low On-resistance RDS(ON) 170mG2 Surface Mount Package ID - 2AS2 RoHS Compliant & Halogen-Free SOT-26G1DescriptionD2D1Advanced Power MOSFETs utilized advanced processingtechniques to achieve the lowest poss
ap2625gy-hf.pdf
AP2625GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2 Low Gate Charge BVDSS -30VS1D1 Capable of 2.5V Gate Drive RDS(ON) 185mG2 Surface Mount Package ID - 2AS2SOT-26 RoHS Compliant & Halogen-Free G1DescriptionD2D1Advanced Power MOSFETs utilized advanced processingtechniques to achieve the lowest
ap2622gy-hf.pdf
AP2622GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD1 Low Gate Charge D2 BVDSS 50V Small Package Outline RDS(ON) 1.8G1 G2 Surface Mount Package ID 520mA RoHS CompliantS2S1DescriptionD2Advanced Power MOSFETs utilized advanced processing techniques toS1achieve the lowest possible on-resistance, extre
ap2622gy.pdf
AP2622GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2 Low Gate Charge BVDSS 50VS1D1 Small Package Outline RDS(ON) 1.8G2 Surface Mount Package ID 520mAS2 RoHS Compliant SOT-26 G1DescriptionD1D2AP2622 series are from Advanced Power innovateddesign and silicon process technology to achieve theG1 G2
ap2623gy.pdf
AP2623GYRoHS-compliant ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS -30VD2D1 Low On-resistance RDS(ON) 170m Surface Mount Package ID - 2AG2G1S2S1DescriptionD2Advanced Power MOSFETs utilized advanced processing techniquesS1to achieve the lowest possible on-resistance, extremely efficient and
ap2625gy.pdf
AP2625GYRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD2D1 Low Gate Drive RDS(ON) 185m Surface Mount Package ID - 2AG2G1S2S1DescriptionD2S1Advanced Power MOSFETs utilized advanced processing techniquesD1to achieve the lowest possible on-resistance, extremely efficient andG2
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