AP2N050G Todos los transistores

 

AP2N050G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2N050G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
   Paquete / Cubierta: SOT89
 

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AP2N050G Datasheet (PDF)

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AP2N050G

AP2N050GHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Low Gate Charge RDS(ON) 50m Fast Switching Characteristic ID3 4AS RoHS Compliant & Halogen-FreeDSOT-89GDescription DAP2N050 series are from Advanced Power innovated design andsilicon process technology to achieve th

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 ap2n050h.pdf pdf_icon

AP2N050G

AP2N050HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 50m Fast Switching Characteristic ID 14.8AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 seriesare fromAdvanced Power innovated designAP2N050series arefrom Advanced Power innovated

 9.1. Size:189K  ape
 ap2n075en.pdf pdf_icon

AP2N050G

AP2N075ENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 75m Fast Switching Performance ID 3.5AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2N075E series are from Advanced Power innovated design andGsilicon process technology to achiev

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 ap2n030ey.pdf pdf_icon

AP2N050G

AP2N030EYHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 34mD Fast Switching Performance ID3 6.3AGD RoHS Compliant & Halogen-FreeSOT-26DDDescriptionAP2N030E series are from Advanced Power innovated design andGsilicon process technology

MOSTRAR MÁS

Otros transistores... AP2535GEY , AP2622GY , AP6800EY , AP1332GEU , AP2N7002KU , AP1430GEU6 , AP2N1K2EN1 , AP5N2K2EN1 , IRF830 , AP6N090G , AP9451GG , AP9452GG , AP9T16AGH , AP99T03GS , AP99T03GP , AP9992GR , AP9990GMT-L .

History: TT8J11 | NCE65N680I | TK17A80W | TSM4415CS | APT5010B2LC | NCEP4045GU | GT045N10D5

 

 
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