AP2N050G PDF and Equivalents Search

 

AP2N050G Specs and Replacement

Type Designator: AP2N050G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: SOT89

AP2N050G substitution

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AP2N050G datasheet

 ..1. Size:132K  ape
ap2n050g.pdf pdf_icon

AP2N050G

AP2N050G Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Low Gate Charge RDS(ON) 50m Fast Switching Characteristic ID3 4A S RoHS Compliant & Halogen-Free D SOT-89 G Description D AP2N050 series are from Advanced Power innovated design and silicon process technology to achieve th... See More ⇒

 7.1. Size:65K  ape
ap2n050h.pdf pdf_icon

AP2N050G

AP2N050H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 50m Fast Switching Characteristic ID 14.8A G G RoHS Compliant & Halogen-Free S S Description AP4604 seriesare fromAdvanced Power innovated design AP2N050series arefrom Advanced Power innovated ... See More ⇒

 9.1. Size:189K  ape
ap2n075en.pdf pdf_icon

AP2N050G

AP2N075EN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 75m Fast Switching Performance ID 3.5A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2N075E series are from Advanced Power innovated design and G silicon process technology to achiev... See More ⇒

 9.2. Size:210K  ape
ap2n030ey.pdf pdf_icon

AP2N050G

AP2N030EY Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Capable of 2.5V Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 34m D Fast Switching Performance ID3 6.3A G D RoHS Compliant & Halogen-Free SOT-26 D D Description AP2N030E series are from Advanced Power innovated design and G silicon process technology ... See More ⇒

Detailed specifications: AP2535GEY, AP2622GY, AP6800EY, AP1332GEU, AP2N7002KU, AP1430GEU6, AP2N1K2EN1, AP5N2K2EN1, 2N60, AP6N090G, AP9451GG, AP9452GG, AP9T16AGH, AP99T03GS, AP99T03GP, AP9992GR, AP9990GMT-L

Keywords - AP2N050G MOSFET specs

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