AP9926GEO MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9926GEO
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 190 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
Paquete / Cubierta: TSSOP8
Búsqueda de reemplazo de AP9926GEO MOSFET
AP9926GEO Datasheet (PDF)
ap9926geo.pdf
AP9926GEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETG2 Low On-resistance BVDSS 20VS2S2D2 Capable of 2.5V Gate Drive RDS(ON) 28mG1S1 Low Drive Current S1 ID 4.6ATSSOP-8D1 Surface Mount Package RoHS Compliant & Halogen-FreeDescriptionD1 D2Advanced Power MOSFETs from APEC provide theG1
ap9926geo-hf.pdf
AP9926GEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETG2 Low On-resistance BVDSS 20VS2S2D2 Capable of 2.5V Gate Drive RDS(ON) 28mG1S1 Low Drive Current S1 ID 4.6ATSSOP-8D1 Surface Mount Package RoHS Compliant & Halogen-FreeDescriptionD1 D2Advanced Power MOSFETs from APEC provide theG1
ap9926gem.pdf
AP9926GEMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low on-resistance BVDSS 20VD2D2 Capable of 2.5V gate drive D1 RDS(ON) 30mD1 Low drive current ID 6AG2S2 Surface mount packageG1SO-8S1DescriptionThe Advanced Power MOSFETs from APEC provide the D1 D2designer with the best combination of fast sw
ap9926gm-hf.pdf
AP9926GM-HFHalogen-Free ProductAdvanced Power Dual N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 20VD2D2D1 Capable of 2.5V Gate Drive RDS(ON) 30mD1 Surface Mount Package ID 6AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionD2D1AP9926 series are from Advanced Power innovated design andsilicon process te
Otros transistores... AP9990GMT-L , AP9990GMT , AP9979GH , AP9950AGP , AP9950AGH , AP9938GEY , AP9938GEO , AP9938AGEY , K2611 , AP9923GEO , AP9922GEO , AP97T07AGP , AP95T10AGP , AP95T07BGP , AP9579GJ , AP9467GH , AP9467AGH .
History: 2SJ603 | H8N65F
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