AP9926GEO MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP9926GEO
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: TSSOP8

Búsqueda de reemplazo de MOSFET AP9926GEO

AP9926GEO Datasheet (PDF)

..1. Size:144K ape
ap9926geo.pdf

AP9926GEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETG2 Low On-resistance BVDSS 20VS2S2D2 Capable of 2.5V Gate Drive RDS(ON) 28mG1S1 Low Drive Current S1 ID 4.6ATSSOP-8D1 Surface Mount Package RoHS Compliant & Halogen-FreeDescriptionD1 D2Advanced Power MOSFETs from APEC provide theG1

0.1. Size:60K ape
ap9926geo-hf.pdf

6.1. Size:87K ape
ap9926gem.pdf

AP9926GEMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low on-resistance BVDSS 20VD2D2 Capable of 2.5V gate drive D1 RDS(ON) 30mD1 Low drive current ID 6AG2S2 Surface mount packageG1SO-8S1DescriptionThe Advanced Power MOSFETs from APEC provide the D1 D2designer with the best combination of fast sw

7.1. Size:60K ape
ap9926gm-hf.pdf

AP9926GM-HFHalogen-Free ProductAdvanced Power Dual N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 20VD2D2D1 Capable of 2.5V Gate Drive RDS(ON) 30mD1 Surface Mount Package ID 6AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionD2D1AP9926 series are from Advanced Power innovated design andsilicon process te

7.2. Size:80K ape
ap9926go.pdf

AP9926GOPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2Low on-resistance BVDSS 20V S2S2D2Capable of 2.5V gate drive RDS(ON) 28m G1S1Low drive current S1 ID 4.6A TSSOP-8D1Surface mount package DescriptionD2The Advanced Power MOSFETs fr

7.3. Size:167K ape
ap9926gm.pdf

AP9926GM-HFHalogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 20VD2D2D1 Capable of 2.5V Gate Drive RDS(ON) 30mD1 Surface Mount Package ID 6AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionD2D1AP9926 series ar

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Liste

Recientemente añadidas las descripciónes de los transistores: