AP9926GEO Todos los transistores

 

AP9926GEO MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9926GEO

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: TSSOP8

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AP9926GEO datasheet

 ..1. Size:144K  ape
ap9926geo.pdf pdf_icon

AP9926GEO

AP9926GEO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET G2 Low On-resistance BVDSS 20V S2 S2 D2 Capable of 2.5V Gate Drive RDS(ON) 28m G1 S1 Low Drive Current S1 ID 4.6A TSSOP-8 D1 Surface Mount Package RoHS Compliant & Halogen-Free Description D1 D2 Advanced Power MOSFETs from APEC provide the G1

 0.1. Size:60K  ape
ap9926geo-hf.pdf pdf_icon

AP9926GEO

AP9926GEO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET G2 Low On-resistance BVDSS 20V S2 S2 D2 Capable of 2.5V Gate Drive RDS(ON) 28m G1 S1 Low Drive Current S1 ID 4.6A TSSOP-8 D1 Surface Mount Package RoHS Compliant & Halogen-Free Description D1 D2 Advanced Power MOSFETs from APEC provide the G1

 6.1. Size:87K  ape
ap9926gem.pdf pdf_icon

AP9926GEO

AP9926GEM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 20V D2 D2 Capable of 2.5V gate drive D1 RDS(ON) 30m D1 Low drive current ID 6A G2 S2 Surface mount package G1 SO-8 S1 Description The Advanced Power MOSFETs from APEC provide the D1 D2 designer with the best combination of fast sw

 7.1. Size:60K  ape
ap9926gm-hf.pdf pdf_icon

AP9926GEO

AP9926GM-HF Halogen-Free Product Advanced Power Dual N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 20V D2 D2 D1 Capable of 2.5V Gate Drive RDS(ON) 30m D1 Surface Mount Package ID 6A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description D2 D1 AP9926 series are from Advanced Power innovated design and silicon process te

Otros transistores... AP9990GMT-L , AP9990GMT , AP9979GH , AP9950AGP , AP9950AGH , AP9938GEY , AP9938GEO , AP9938AGEY , K2611 , AP9923GEO , AP9922GEO , AP97T07AGP , AP95T10AGP , AP95T07BGP , AP9579GJ , AP9467GH , AP9467AGH .

History: MMD80R1K2PRH | AP2604GY | MMF80R450PTH | MTP2N50 | 2SK2371 | AP99T03GS | IRFS440B

 

 

 

 

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