AP9926GEO MOSFET Datasheet: N-Ch, 20V, 4.6A. Full specification with pinout and replacement list

AP9926GEO Specs and Replacement

Type Designator: AP9926GEO

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TSSOP8

AP9926GEO substitution

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AP9926GEO datasheet

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AP9926GEO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET G2 Low On-resistance BVDSS 20V S2 S2 D2 Capable of 2.5V Gate Drive RDS(ON) 28m G1 S1 Low Drive Current S1 ID 4.6A TSSOP-8 D1 Surface Mount Package RoHS Compliant & Halogen-Free Description D1 D2 Advanced Power MOSFETs from APEC provide the G1 ... See More ⇒

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AP9926GEM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 20V D2 D2 Capable of 2.5V gate drive D1 RDS(ON) 30m D1 Low drive current ID 6A G2 S2 Surface mount package G1 SO-8 S1 Description The Advanced Power MOSFETs from APEC provide the D1 D2 designer with the best combination of fast sw... See More ⇒

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AP9926GM-HF Halogen-Free Product Advanced Power Dual N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 20V D2 D2 D1 Capable of 2.5V Gate Drive RDS(ON) 30m D1 Surface Mount Package ID 6A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description D2 D1 AP9926 series are from Advanced Power innovated design and silicon process te... See More ⇒