AP8600S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP8600S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 105 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 70 nS
Cossⓘ - Capacitancia de salida: 1570 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de AP8600S MOSFET
AP8600S Datasheet (PDF)
ap8600s.pdf

AP8600SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 80V Ultra-low On-resistance RDS(ON) 5m Fast Switching Characteristic ID4 105AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Power innovated designAP8600 series are from Advanced Power innova
ap8600p.pdf

AP8600PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 80V Ultra-low On-resistance RDS(ON) 5m Fast Switching Characteristic ID3 105AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Power innovated designAP8600 series are from Advanced Power innova
ap8600mt.pdf

AP8600MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 80VD SO-8 Compatible with Heatsink RDS(ON) 3.9m Ultra Low On-resistance ID4 120AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP8600 series are from Advanced Power innovated design andsilicon process technology to ach
ap8600mt-l.pdf

AP8600MT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 80VD 100% Rg & UIS Test RDS(ON) 3.9m Ultra Low On-resistance ID4 60AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP8600 series are from Advanced Power innovated design andsilicon process technology to achieve the l
Otros transistores... AP8N8R0P , AP8N8R0MT , AP8N8R0J , AP8N8R0I , AP8N8R0H , AP8N4R2MT , AP8N3R5CMT , AP8604CDT , IRFP460 , AP8600P , AP8600MT-L , AP8600MT , AP85T10AGP , AP80WN2K5I , AP80SL990BJB , AP80SL990BI , AP80SL990BH .
History: SVS60R360FJDE3 | IRFH5301PBF | HX2300A | NP20P06YLG | SVD50N06MJ | TK22E10N1
History: SVS60R360FJDE3 | IRFH5301PBF | HX2300A | NP20P06YLG | SVD50N06MJ | TK22E10N1



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL1010PU | JMSL1010PP | JMSL1010PKS | JMSL1010PK | JMSL1010PGS | JMSL1010PGQ | JMSL1010PGD | JMSL1010PG | JMSL1010PE | JMSL1010PC | JMSL1010AUQ | JMSL1010AU | JMSL1010AP | JMSL1010AKQ | JMSL1010AK | JMSL1010AGQ
Popular searches
2sc3181 | 2sb324 | 2sc1904 | 2sc281 | m28s transistor | 2n3640 | tta1943 transistor | fb4410z