AP8600S Todos los transistores

 

AP8600S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP8600S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 105 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 1570 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: TO263
 

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AP8600S Datasheet (PDF)

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 ap8600s.pdf pdf_icon

AP8600S

AP8600SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 80V Ultra-low On-resistance RDS(ON) 5m Fast Switching Characteristic ID4 105AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Power innovated designAP8600 series are from Advanced Power innova

 8.1. Size:207K  ape
 ap8600p.pdf pdf_icon

AP8600S

AP8600PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 80V Ultra-low On-resistance RDS(ON) 5m Fast Switching Characteristic ID3 105AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Power innovated designAP8600 series are from Advanced Power innova

 8.2. Size:163K  ape
 ap8600mt.pdf pdf_icon

AP8600S

AP8600MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 80VD SO-8 Compatible with Heatsink RDS(ON) 3.9m Ultra Low On-resistance ID4 120AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP8600 series are from Advanced Power innovated design andsilicon process technology to ach

 8.3. Size:319K  ape
 ap8600mt-l.pdf pdf_icon

AP8600S

AP8600MT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 80VD 100% Rg & UIS Test RDS(ON) 3.9m Ultra Low On-resistance ID4 60AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP8600 series are from Advanced Power innovated design andsilicon process technology to achieve the l

MOSTRAR MÁS

Otros transistores... AP8N8R0P , AP8N8R0MT , AP8N8R0J , AP8N8R0I , AP8N8R0H , AP8N4R2MT , AP8N3R5CMT , AP8604CDT , IRFP460 , AP8600P , AP8600MT-L , AP8600MT , AP85T10AGP , AP80WN2K5I , AP80SL990BJB , AP80SL990BI , AP80SL990BH .

History: SVS60R360FJDE3 | IRFH5301PBF | HX2300A | NP20P06YLG | SVD50N06MJ | TK22E10N1

 

 
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