AP8600S MOSFET. Datasheet pdf. Equivalent
Type Designator: AP8600S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 105 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 74 nC
trⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 1570 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO263
AP8600S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP8600S Datasheet (PDF)
ap8600s.pdf
AP8600SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 80V Ultra-low On-resistance RDS(ON) 5m Fast Switching Characteristic ID4 105AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Power innovated designAP8600 series are from Advanced Power innova
ap8600p.pdf
AP8600PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 80V Ultra-low On-resistance RDS(ON) 5m Fast Switching Characteristic ID3 105AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Power innovated designAP8600 series are from Advanced Power innova
ap8600mt.pdf
AP8600MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 80VD SO-8 Compatible with Heatsink RDS(ON) 3.9m Ultra Low On-resistance ID4 120AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP8600 series are from Advanced Power innovated design andsilicon process technology to ach
ap8600mt-l.pdf
AP8600MT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 80VD 100% Rg & UIS Test RDS(ON) 3.9m Ultra Low On-resistance ID4 60AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP8600 series are from Advanced Power innovated design andsilicon process technology to achieve the l
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
