AP70WN1K5P Todos los transistores

 

AP70WN1K5P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP70WN1K5P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 89.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

AP70WN1K5P Datasheet (PDF)

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 ap70wn1k5p.pdf pdf_icon

AP70WN1K5P

AP70WN1K5PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 700VD Simple Drive Requirement RDS(ON) 1.5 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP70WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

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AP70WN1K5P

AP70WN1K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 700VD Simple Drive Requirement RDS(ON) 1.5 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP70WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

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 ap70wn2k8h.pdf pdf_icon

AP70WN1K5P

AP70WN2K8HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 700VD Simple Drive Requirement RDS(ON) 2.8 Fast Switching Characteristic ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP70WN2K8 series are from the innovated design and siliconGprocess technology to achieve the lowest possible on

 8.2. Size:89K  ape
 ap70wn2k8l.pdf pdf_icon

AP70WN1K5P

AP70WN2K8LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 700VD Simple Drive Requirement RDS(ON) 2.8 Fast Switching Characteristic ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP70WN2K8 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CP650 | WM02N08L | SWF2N70D | HGN035N08AL

 

 
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