All MOSFET. AP70WN1K5P Datasheet

 

AP70WN1K5P MOSFET. Datasheet pdf. Equivalent

Type Designator: AP70WN1K5P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 89.2 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 23 nS

Drain-Source Capacitance (Cd): 45 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO220

AP70WN1K5P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AP70WN1K5P Datasheet (PDF)

1.1. ap70wn1k5p.pdf Size:159K _a-power

AP70WN1K5P
AP70WN1K5P

AP70WN1K5P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% UIS Test BVDSS 700V D ▼ Simple Drive Requirement RDS(ON) 1.5Ω ▼ Fast Switching Characteristic ID3 6A G ▼ RoHS Compliant & Halogen-Free S Description AP70WN1K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-re

1.2. ap70wn1k5i.pdf Size:59K _a-power

AP70WN1K5P
AP70WN1K5P

AP70WN1K5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% UIS Test BVDSS 700V D ▼ Simple Drive Requirement RDS(ON) 1.5Ω ▼ Fast Switching Characteristic ID3 6A G ▼ RoHS Compliant & Halogen-Free S Description AP70WN1K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-re

 4.1. ap70wn2k8i.pdf Size:176K _a-power

AP70WN1K5P
AP70WN1K5P

AP70WN2K8I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% UIS Test BVDSS 700V D ▼ Simple Drive Requirement RDS(ON) 2.8Ω ▼ Fast Switching Characteristic ID3 4A G ▼ RoHS Compliant & Halogen-Free S Description AP70WN2K8 series are from the innovated design and silicon process technology to achieve the lowest possible on-re

4.2. ap70wn2k8l.pdf Size:89K _a-power

AP70WN1K5P
AP70WN1K5P

AP70WN2K8L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% UIS Test BVDSS 700V D ▼ Simple Drive Requirement RDS(ON) 2.8Ω ▼ Fast Switching Characteristic ID3 4A G ▼ RoHS Compliant & Halogen-Free S Description AP70WN2K8 series are from the innovated design and silicon process technology to achieve the lowest possible on-re

 4.3. ap70wn2k8h.pdf Size:198K _a-power

AP70WN1K5P
AP70WN1K5P

AP70WN2K8H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% UIS Test BVDSS 700V D ▼ Simple Drive Requirement RDS(ON) 2.8Ω ▼ Fast Switching Characteristic ID3 4A G ▼ RoHS Compliant & Halogen-Free S Description AP70WN2K8 series are from the innovated design and silicon G process technology to achieve the lowest possible on

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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