AP6N3R2P Todos los transistores

 

AP6N3R2P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP6N3R2P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 138.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 130 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 105 nS
   Cossⓘ - Capacitancia de salida: 3670 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
   Paquete / Cubierta: TO220
 

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AP6N3R2P Datasheet (PDF)

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 ap6n3r2p.pdf pdf_icon

AP6N3R2P

AP6N3R2PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 3.2m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N3R2 seriesare fromAdvanced Power innovated design and

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 ap6n3r5i.pdf pdf_icon

AP6N3R2P

AP6N3R5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.58m Low On-resistance ID 72AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N3R5 seriesare fromAdvanced Power innovated design anda

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 ap6n3r8h.pdf pdf_icon

AP6N3R2P

AP6N3R8HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.8m Fast Switching Characteristic ID5 155AG RoHS Compliant & Halogen-FreeSDescriptionGAP6N3R8 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology to

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 ap6n3r4cmt.pdf pdf_icon

AP6N3R2P

AP6N3R4CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD SO-8 Compatible with Heatsink RDS(ON) 3.4m Ultra Low On-resistance ID4 130AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP6N3R4C series are from Advanced Power innovated design andsilicon process technology to

MOSTRAR MÁS

Otros transistores... AP6N3R7MT , AP6N3R5S , AP6N3R5P , AP6N3R5LIN , AP6N3R5LI , AP6N3R5I , AP6N3R4CMT-L , AP6N3R4CMT , IRF1405 , AP6N3R1LH , AP6N3R0LMT , AP6N2R0P , AP6N2R0I , AP6N2R0CDT , AP6N1R7CDT , AP6N100JV , AP6N100J .

History: STC4539 | NCE50NF600I | BUK9Y4R4-40E | MMIX1F360N15T2 | 2SK1425 | 2N6917 | CHM3032JGP

 

 
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