AP6N3R2P Specs and Replacement

Type Designator: AP6N3R2P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 138.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 3670 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: TO220

AP6N3R2P substitution

- MOSFET ⓘ Cross-Reference Search

 

AP6N3R2P datasheet

 ..1. Size:206K  ape
 ap6n3r2p.pdf pdf_icon

AP6N3R2P

AP6N3R2P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 3.2m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N3R2 seriesare fromAdvanced Power innovated design and... See More ⇒

 8.1. Size:183K  ape
 ap6n3r5i.pdf pdf_icon

AP6N3R2P

AP6N3R5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.58m Low On-resistance ID 72A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N3R5 seriesare fromAdvanced Power innovated design and a... See More ⇒

 8.2. Size:205K  ape
 ap6n3r8h.pdf pdf_icon

AP6N3R2P

AP6N3R8H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.8m Fast Switching Characteristic ID5 155A G RoHS Compliant & Halogen-Free S Description G AP6N3R8 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology to ... See More ⇒

 8.3. Size:162K  ape
 ap6n3r4cmt.pdf pdf_icon

AP6N3R2P

AP6N3R4CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D SO-8 Compatible with Heatsink RDS(ON) 3.4m Ultra Low On-resistance ID4 130A G RoHS Compliant & Halogen-Free D S D D Description D AP6N3R4C series are from Advanced Power innovated design and silicon process technology to... See More ⇒

SHOW MORE

Detailed specifications: AP6N3R7MT, AP6N3R5S, AP6N3R5P, AP6N3R5LIN, AP6N3R5LI, AP6N3R5I, AP6N3R4CMT-L, AP6N3R4CMT, IRF830, AP6N3R1LH, AP6N3R0LMT, AP6N2R0P, AP6N2R0I, AP6N2R0CDT, AP6N1R7CDT, AP6N100JV, AP6N100J

Keywords - AP6N3R2P MOSFET specs

 AP6N3R2P cross reference

 AP6N3R2P equivalent finder

 AP6N3R2P pdf lookup

 AP6N3R2P substitution

 AP6N3R2P replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs