IRFI5210 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFI5210
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 63 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 86 nS
Cossⓘ - Capacitancia de salida: 790 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET IRFI5210
IRFI5210 Datasheet (PDF)
irfi5210.pdf
PD - 9.1404AIRFI5210PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.06 P-ChannelG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextre
irfi520gpbf.pdf
PD- 95392IRFI520GPbF Lead-Free06/10/04Document Number: 91143 www.vishay.com1IRFI520GPbFDocument Number: 91143 www.vishay.com2IRFI520GPbFDocument Number: 91143 www.vishay.com3IRFI520GPbFDocument Number: 91143 www.vishay.com4IRFI520GPbFDocument Number: 91143 www.vishay.com5IRFI520GPbFDocument Number: 91143 www.vishay.com6IRFI520GPbFDocument Num
irfi520n.pdf
PD - 9.1362APRELIMINARY IRFI520NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.20 Fully Avalanche RatedGID = 7.6ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible
irfi520g irfi520gpbf sihfi520g.pdf
IRFI520G, SiHFI520GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.27f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating TemperatureQgs (nC) 4.4 Dynamic dV/dt RatingQgd (nC) 7.7 Low Th
irfi520g sihfi520g.pdf
IRFI520G, SiHFI520GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.27f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating TemperatureQgs (nC) 4.4 Dynamic dV/dt RatingQgd (nC) 7.7 Low Th
irfi520g.pdf
iscN-Channel MOSFET Transistor IRFI510GFEATURESLow drain-source on-resistance:RDS(ON) =0.27 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
Otros transistores... IRFI1310N , IRFI3205 , IRFI3710 , IRFI460 , IRFI4905 , IRFI510A , IRFI520A , IRFI520N , AON7506 , IRFI530A , IRFI530N , IRFI540A , IRFI540N , IRFI550A , IRFI610A , IRFI614A , IRFI614G .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918