IRFI5210 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFI5210
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 48 W
Tensión drenaje-fuente (Vds): 100 V
Tensión compuerta-fuente (Vgs): 10 V
Corriente continua de drenaje (Id): 20 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 0.06 Ohm
Empaquetado / Estuche: TO220
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IRFI5210 Datasheet (PDF)
1.1. irfi5210.pdf 
Size:143K _international_rectifier
PD - 9.1404A IRFI5210 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.06? P-Channel G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l
4.1. irfi520g irfi520gpbf.pdf Size:1603K _upd
IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 100 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω)VGS = 10 V 0.27 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 16 • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature Qgs (nC) 4.4 • Dynamic dV/dt Rating Qgd (nC) 7.7 • Low Th
4.2. irfi520n.pdf Size:133K _international_rectifier
PD - 9.1362A PRELIMINARY IRFI520N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.20? Fully Avalanche Rated G ID = 7.6A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-re
4.3. irfi520gpbf.pdf Size:1017K _international_rectifier
PD- 95392 IRFI520GPbF Lead-Free 06/10/04 Document Number: 91143 www.vishay.com 1 IRFI520GPbF Document Number: 91143 www.vishay.com 2 IRFI520GPbF Document Number: 91143 www.vishay.com 3 IRFI520GPbF Document Number: 91143 www.vishay.com 4 IRFI520GPbF Document Number: 91143 www.vishay.com 5 IRFI520GPbF Document Number: 91143 www.vishay.com 6 IRFI520GPbF Document Number:
4.4. irfi520g.pdf Size:178K _international_rectifier
4.5. irfi520g sihfi520g.pdf Size:1601K _vishay
IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 10 V 0.27 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating Temperature Qgs (nC) 4.4 Dynamic dV/dt Rating Qgd (nC) 7.7 Low Thermal Resistance
Otros transistores... IRFI1310N , IRFI3205 , IRFI3710 , IRFI460 , IRFI4905 , IRFI510A , IRFI520A , IRFI520N , IRFZ24N , IRFI530A , IRFI530N , IRFI540A , IRFI540N , IRFI550A , IRFI610A , IRFI614A , IRFI614G .
