IRFI5210 Todos los transistores

PD - 9.1404A IRFI5210 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.06 P-Channel G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre

PD- 95392 IRFI520GPbF Lead-Free 06/10/04 Document Number 91143 www.vishay.com 1 IRFI520GPbF Document Number 91143 www.vishay.com 2 IRFI520GPbF Document Number 91143 www.vishay.com 3 IRFI520GPbF Document Number 91143 www.vishay.com 4 IRFI520GPbF Document Number 91143 www.vishay.com 5 IRFI520GPbF Document Number 91143 www.vishay.com 6 IRFI520GPbF Document Num

PD - 9.1362A PRELIMINARY IRFI520N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.20 Fully Avalanche Rated G ID = 7.6A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible

IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.27 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating Temperature Qgs (nC) 4.4 Dynamic dV/dt Rating Qgd (nC) 7.7 Low Th

IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.27 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating Temperature Qgs (nC) 4.4 Dynamic dV/dt Rating Qgd (nC) 7.7 Low Th

iscN-Channel MOSFET Transistor IRFI510G FEATURES Low drain-source on-resistance RDS(ON) =0.27 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI