IRFI5210 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFI5210
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 63 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 23 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 180(max) nC
Время нарастания (tr): 86 ns
Выходная емкость (Cd): 790 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.06 Ohm
Тип корпуса: TO220F
IRFI5210 Datasheet (PDF)
irfi5210.pdf
PD - 9.1404AIRFI5210PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.06 P-ChannelG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextre
irfi520gpbf.pdf
PD- 95392IRFI520GPbF Lead-Free06/10/04Document Number: 91143 www.vishay.com1IRFI520GPbFDocument Number: 91143 www.vishay.com2IRFI520GPbFDocument Number: 91143 www.vishay.com3IRFI520GPbFDocument Number: 91143 www.vishay.com4IRFI520GPbFDocument Number: 91143 www.vishay.com5IRFI520GPbFDocument Number: 91143 www.vishay.com6IRFI520GPbFDocument Num
irfi520n.pdf
PD - 9.1362APRELIMINARY IRFI520NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.20 Fully Avalanche RatedGID = 7.6ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible
irfi520g irfi520gpbf sihfi520g.pdf
IRFI520G, SiHFI520GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.27f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating TemperatureQgs (nC) 4.4 Dynamic dV/dt RatingQgd (nC) 7.7 Low Th
irfi520g sihfi520g.pdf
IRFI520G, SiHFI520GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.27f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating TemperatureQgs (nC) 4.4 Dynamic dV/dt RatingQgd (nC) 7.7 Low Th
irfi520g.pdf
iscN-Channel MOSFET Transistor IRFI510GFEATURESLow drain-source on-resistance:RDS(ON) =0.27 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
Другие MOSFET... IRFI1310N , IRFI3205 , IRFI3710 , IRFI460 , IRFI4905 , IRFI510A , IRFI520A , IRFI520N , QM0930M3 , IRFI530A , IRFI530N , IRFI540A , IRFI540N , IRFI550A , IRFI610A , IRFI614A , IRFI614G .
