IRFI5210
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFI5210
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 63
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 23
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 180(max)
nC
trⓘ - Rise Time: 86
nS
Cossⓘ -
Output Capacitance: 790
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06
Ohm
Package:
TO220F
IRFI5210
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFI5210
Datasheet (PDF)
..1. Size:143K international rectifier
irfi5210.pdf 
PD - 9.1404AIRFI5210PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.06 P-ChannelG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextre
8.3. Size:1017K international rectifier
irfi520gpbf.pdf
PD- 95392IRFI520GPbF Lead-Free06/10/04Document Number: 91143 www.vishay.com1IRFI520GPbFDocument Number: 91143 www.vishay.com2IRFI520GPbFDocument Number: 91143 www.vishay.com3IRFI520GPbFDocument Number: 91143 www.vishay.com4IRFI520GPbFDocument Number: 91143 www.vishay.com5IRFI520GPbFDocument Number: 91143 www.vishay.com6IRFI520GPbFDocument Num
8.4. Size:133K international rectifier
irfi520n.pdf
PD - 9.1362APRELIMINARY IRFI520NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.20 Fully Avalanche RatedGID = 7.6ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible
8.5. Size:1603K vishay
irfi520g irfi520gpbf sihfi520g.pdf
IRFI520G, SiHFI520GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.27f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating TemperatureQgs (nC) 4.4 Dynamic dV/dt RatingQgd (nC) 7.7 Low Th
8.6. Size:1601K vishay
irfi520g sihfi520g.pdf
IRFI520G, SiHFI520GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.27f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating TemperatureQgs (nC) 4.4 Dynamic dV/dt RatingQgd (nC) 7.7 Low Th
8.7. Size:275K inchange semiconductor
irfi520g.pdf
iscN-Channel MOSFET Transistor IRFI510GFEATURESLow drain-source on-resistance:RDS(ON) =0.27 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
Datasheet: IRFI1310N
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, IRFI540N
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