AP65SL041AWL Todos los transistores

 

AP65SL041AWL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP65SL041AWL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 480 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 74 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 135 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.041 Ohm
   Paquete / Cubierta: TO247
 

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AP65SL041AWL Datasheet (PDF)

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AP65SL041AWL

AP65SL041AWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 41m Simple Drive Requirement ID3 74AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL041A series are from Advanced Power innovated design andsilicon process technology to achie

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ap65sl045afwl.pdf pdf_icon

AP65SL041AWL

AP65SL045AFWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ultra-Fast Body Diode BVDSS 650VD 100% Rg & UIS Test RDS(ON) 45m Fast Switching Characteristic ID 63.7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL045AF series are from Advanced Power innovated designand silicon process technology to achieve the l

 7.1. Size:214K  ape
ap65sl099as.pdf pdf_icon

AP65SL041AWL

AP65SL099ASHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 99m Simple Drive Requirement ID3 38AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL099A series are from Advanced Power innovated designand silicon process technology to achieve the lo

 7.2. Size:242K  ape
ap65sl099dwl.pdf pdf_icon

AP65SL041AWL

AP65SL099DWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 99m Simple Drive Requirement ID3 38AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL099D series are from Advanced Power innovated designand silicon process technology to achieve the l

Otros transistores... AP65SL105AFWL , AP65SL105AFS , AP65SL099DWL , AP65SL099DR , AP65SL099DI , AP65SL099AWL , AP65SL099AS , AP65SL045AFWL , IRFP450 , AP65PN2R6P , AP65PN2R6L , AP65PN2R6I , AP65PN2R6H , AP65PN2R5I , AP65PN1R4P , AP60WN720IN , AP60WN720I .

History: OSG60R030HTZF | RJK1055DPB | ME55N06-G | WFF740 | MTP8P08 | FJ6K01010L | DHD3N90

 

 
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