AP65SL041AWL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP65SL041AWL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 480 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 74 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 256 nC
   trⓘ - Tiempo de subida: 135 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.041 Ohm
   Paquete / Cubierta: TO247

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AP65SL041AWL Datasheet (PDF)

..1. Size:244K ape
ap65sl041awl.pdf

AP65SL041AWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 41m Simple Drive Requirement ID3 74AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL041A series are from Advanced Power innovated design andsilicon process technology to achie

6.1. Size:243K ape
ap65sl045afwl.pdf

AP65SL045AFWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ultra-Fast Body Diode BVDSS 650VD 100% Rg & UIS Test RDS(ON) 45m Fast Switching Characteristic ID 63.7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL045AF series are from Advanced Power innovated designand silicon process technology to achieve the l

7.1. Size:214K ape
ap65sl099as.pdf

AP65SL099ASHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 99m Simple Drive Requirement ID3 38AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL099A series are from Advanced Power innovated designand silicon process technology to achieve the lo

7.2. Size:242K ape
ap65sl099dwl.pdf

AP65SL099DWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 99m Simple Drive Requirement ID3 38AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL099D series are from Advanced Power innovated designand silicon process technology to achieve the l

7.3. Size:206K ape
ap65sl099dr.pdf

AP65SL099DRHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Low trr / Qrr RDS(ON) 99m Simple Drive Requirement ID3 38AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL099D series are from Advanced Power innovated designand silicon process technology to achieve the lowest possible on

7.4. Size:245K ape
ap65sl099awl.pdf

AP65SL099AWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 99m Simple Drive Requirement ID3 38AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL099A series are from Advanced Power innovated designand silicon process technology to achie

7.5. Size:219K ape
ap65sl099di.pdf

AP65SL099DIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 99m Simple Drive Requirement ID3,4 38AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL099D series are from Advanced Power innovated designand silicon process technology to achieve the

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