AP65SL041AWL MOSFET. Datasheet pdf. Equivalent
Type Designator: AP65SL041AWL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 480 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 74 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 256 nC
trⓘ - Rise Time: 135 nS
Cossⓘ - Output Capacitance: 270 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: TO247
AP65SL041AWL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP65SL041AWL Datasheet (PDF)
ap65sl041awl.pdf
AP65SL041AWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 41m Simple Drive Requirement ID3 74AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL041A series are from Advanced Power innovated design andsilicon process technology to achie
ap65sl045afwl.pdf
AP65SL045AFWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ultra-Fast Body Diode BVDSS 650VD 100% Rg & UIS Test RDS(ON) 45m Fast Switching Characteristic ID 63.7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL045AF series are from Advanced Power innovated designand silicon process technology to achieve the l
ap65sl099as.pdf
AP65SL099ASHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 99m Simple Drive Requirement ID3 38AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL099A series are from Advanced Power innovated designand silicon process technology to achieve the lo
ap65sl099dwl.pdf
AP65SL099DWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 99m Simple Drive Requirement ID3 38AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL099D series are from Advanced Power innovated designand silicon process technology to achieve the l
ap65sl099dr.pdf
AP65SL099DRHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Low trr / Qrr RDS(ON) 99m Simple Drive Requirement ID3 38AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL099D series are from Advanced Power innovated designand silicon process technology to achieve the lowest possible on
ap65sl099awl.pdf
AP65SL099AWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 99m Simple Drive Requirement ID3 38AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL099A series are from Advanced Power innovated designand silicon process technology to achie
ap65sl099di.pdf
AP65SL099DIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 99m Simple Drive Requirement ID3,4 38AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL099D series are from Advanced Power innovated designand silicon process technology to achieve the
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: 2SK2519-01
History: 2SK2519-01
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