AP65SL041AWL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP65SL041AWL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 480 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 74 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 135 ns
Cossⓘ - Выходная емкость: 270 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.041 Ohm
Тип корпуса: TO247
Аналог (замена) для AP65SL041AWL
AP65SL041AWL Datasheet (PDF)
ap65sl041awl.pdf
AP65SL041AWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 41m Simple Drive Requirement ID3 74AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL041A series are from Advanced Power innovated design andsilicon process technology to achie
ap65sl045afwl.pdf
AP65SL045AFWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ultra-Fast Body Diode BVDSS 650VD 100% Rg & UIS Test RDS(ON) 45m Fast Switching Characteristic ID 63.7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL045AF series are from Advanced Power innovated designand silicon process technology to achieve the l
ap65sl099as.pdf
AP65SL099ASHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 99m Simple Drive Requirement ID3 38AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL099A series are from Advanced Power innovated designand silicon process technology to achieve the lo
ap65sl099dwl.pdf
AP65SL099DWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 99m Simple Drive Requirement ID3 38AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL099D series are from Advanced Power innovated designand silicon process technology to achieve the l
ap65sl099dr.pdf
AP65SL099DRHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Low trr / Qrr RDS(ON) 99m Simple Drive Requirement ID3 38AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL099D series are from Advanced Power innovated designand silicon process technology to achieve the lowest possible on
ap65sl099awl.pdf
AP65SL099AWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 99m Simple Drive Requirement ID3 38AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL099A series are from Advanced Power innovated designand silicon process technology to achie
ap65sl099di.pdf
AP65SL099DIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 99m Simple Drive Requirement ID3,4 38AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL099D series are from Advanced Power innovated designand silicon process technology to achieve the
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918