AP60WN4K9P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP60WN4K9P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 19 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.9 Ohm

Encapsulados: TO220

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AP60WN4K9P datasheet

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 ap60wn4k9p.pdf pdf_icon

AP60WN4K9P

AP60WN4K9P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K9 series are from the innovated design and silicon process technology to achieve the lowest possible on-re

 5.1. Size:198K  ape
 ap60wn4k9h.pdf pdf_icon

AP60WN4K9P

AP60WN4K9H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K9 series are from the innovated design and silicon G process technology to achieve the lowest possible on

 5.2. Size:212K  ape
 ap60wn4k9i.pdf pdf_icon

AP60WN4K9P

AP60WN4K9I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K9 series are from the innovated design and silicon process technology to achieve the lowest possible on-re

 5.3. Size:199K  ape
 ap60wn4k9j.pdf pdf_icon

AP60WN4K9P

AP60WN4K9J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description G AP60WN4K9 series are from the innovated design and silicon D S TO-251(J) process technology to achieve the l

MOSTRAR MÁS

Otros transistores... AP65PN2R6L, AP65PN2R6I, AP65PN2R6H, AP65PN2R5I, AP65PN1R4P, AP60WN720IN, AP60WN720I, AP60WN650I, 2SK3568, AP60WN4K9J, AP60WN4K9I, AP60WN4K9H, AP60WN4K5I, AP60WN4K5H, AP60WN2K3I, AP60WN2K3H, AP60WN2K1J