AP60WN4K9P Todos los transistores

 

AP60WN4K9P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP60WN4K9P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 19 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.9 Ohm
   Paquete / Cubierta: TO220
 

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AP60WN4K9P Datasheet (PDF)

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 ap60wn4k9p.pdf pdf_icon

AP60WN4K9P

AP60WN4K9PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K9 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

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AP60WN4K9P

AP60WN4K9HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K9 series are from the innovated design and siliconGprocess technology to achieve the lowest possible on

 5.2. Size:212K  ape
 ap60wn4k9i.pdf pdf_icon

AP60WN4K9P

AP60WN4K9IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K9 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

 5.3. Size:199K  ape
 ap60wn4k9j.pdf pdf_icon

AP60WN4K9P

AP60WN4K9JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN4K9 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the l

MOSTRAR MÁS

Otros transistores... AP65PN2R6L , AP65PN2R6I , AP65PN2R6H , AP65PN2R5I , AP65PN1R4P , AP60WN720IN , AP60WN720I , AP60WN650I , 5N65 , AP60WN4K9J , AP60WN4K9I , AP60WN4K9H , AP60WN4K5I , AP60WN4K5H , AP60WN2K3I , AP60WN2K3H , AP60WN2K1J .

History: SST202 | NCE85H21TC | UT8205AL-S08-R | AO4932 | STD5NK50Z | AM45N06-16D

 

 
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