All MOSFET. AP60WN4K9P Datasheet

 

AP60WN4K9P Datasheet and Replacement


   Type Designator: AP60WN4K9P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.9 Ohm
   Package: TO220
 

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AP60WN4K9P Datasheet (PDF)

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AP60WN4K9P

AP60WN4K9PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K9 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

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AP60WN4K9P

AP60WN4K9HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K9 series are from the innovated design and siliconGprocess technology to achieve the lowest possible on

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AP60WN4K9P

AP60WN4K9IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K9 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

 5.3. Size:199K  ape
 ap60wn4k9j.pdf pdf_icon

AP60WN4K9P

AP60WN4K9JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN4K9 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the l

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Datasheet: AP65PN2R6L , AP65PN2R6I , AP65PN2R6H , AP65PN2R5I , AP65PN1R4P , AP60WN720IN , AP60WN720I , AP60WN650I , 5N65 , AP60WN4K9J , AP60WN4K9I , AP60WN4K9H , AP60WN4K5I , AP60WN4K5H , AP60WN2K3I , AP60WN2K3H , AP60WN2K1J .

History: SWP100N10A | TPC8203 | 2SJ494 | AP3403GH | HGA082N10M | 2SJ190 | ME100N03T

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