AP60WN4K9P Specs and Replacement
Type Designator: AP60WN4K9P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 19 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.9 Ohm
Package: TO220
AP60WN4K9P substitution
- MOSFET ⓘ Cross-Reference Search
AP60WN4K9P datasheet
ap60wn4k9p.pdf
AP60WN4K9P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K9 series are from the innovated design and silicon process technology to achieve the lowest possible on-re... See More ⇒
ap60wn4k9h.pdf
AP60WN4K9H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K9 series are from the innovated design and silicon G process technology to achieve the lowest possible on... See More ⇒
ap60wn4k9i.pdf
AP60WN4K9I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K9 series are from the innovated design and silicon process technology to achieve the lowest possible on-re... See More ⇒
ap60wn4k9j.pdf
AP60WN4K9J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description G AP60WN4K9 series are from the innovated design and silicon D S TO-251(J) process technology to achieve the l... See More ⇒
Detailed specifications: AP65PN2R6L, AP65PN2R6I, AP65PN2R6H, AP65PN2R5I, AP65PN1R4P, AP60WN720IN, AP60WN720I, AP60WN650I, 2SK3568, AP60WN4K9J, AP60WN4K9I, AP60WN4K9H, AP60WN4K5I, AP60WN4K5H, AP60WN2K3I, AP60WN2K3H, AP60WN2K1J
Keywords - AP60WN4K9P MOSFET specs
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History: CES2307A | IRF4435TR | BUZ210
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