IRFI610A Todos los transistores

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 irfi610a irfw610a.pdf

 7.1. Size:798K  fairchild semi
 irfw610b irfi610b.pdf

November 2001 IRFW610B / IRFI610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 200V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored t

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 irfi614a irfw614a.pdf

 8.2. Size:286K  international rectifier
 irfi614g.pdf

PD - 95605 IRFI614GPbF Lead-Free 7/28/04 Document Number 91145 www.vishay.com 1 IRFI614GPbF Document Number 91145 www.vishay.com 2 IRFI614GPbF Document Number 91145 www.vishay.com 3 IRFI614GPbF Document Number 91145 www.vishay.com 4 IRFI614GPbF Document Number 91145 www.vishay.com 5 IRFI614GPbF Document Number 91145 www.vishay.com 6 IRFI614GPbF Peak Diode R

 8.3. Size:953K  vishay
 irfi614g sihfi614g.pdf

IRFI614G, SiHFI614G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 250 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 2.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 8.2 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 1.8 Dynamic dV/dt Rating Qgd (nC) 4.5 Low Thermal Resistance Configuration