All MOSFET. IRFI610A Datasheet

 

IRFI610A Datasheet and Replacement


   Type Designator: IRFI610A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO262
 
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IRFI610A Datasheet (PDF)

 ..1. Size:205K  1
 irfi610a irfw610a.pdf pdf_icon

IRFI610A

 7.1. Size:798K  fairchild semi
 irfw610b irfi610b.pdf pdf_icon

IRFI610A

November 2001IRFW610B / IRFI610B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored t

 8.1. Size:209K  1
 irfi614a irfw614a.pdf pdf_icon

IRFI610A

 8.2. Size:286K  international rectifier
 irfi614g.pdf pdf_icon

IRFI610A

PD - 95605IRFI614GPbF Lead-Free7/28/04Document Number: 91145 www.vishay.com1IRFI614GPbFDocument Number: 91145 www.vishay.com2IRFI614GPbFDocument Number: 91145 www.vishay.com3IRFI614GPbFDocument Number: 91145 www.vishay.com4IRFI614GPbFDocument Number: 91145 www.vishay.com5IRFI614GPbFDocument Number: 91145 www.vishay.com6IRFI614GPbFPeak Diode R

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Datasheet: IRFI520A , IRFI520N , IRFI5210 , IRFI530A , IRFI530N , IRFI540A , IRFI540N , IRFI550A , STF13NM60N , IRFI614A , IRFI614G , IRFI620A , IRFI620G , IRFI624A , IRFI624G , IRFI630A , IRFI630G .

History: AO3400A | HSU3103

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