IRFI610A Datasheet and Replacement
Type Designator: IRFI610A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 35 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO262
IRFI610A substitution
IRFI610A Datasheet (PDF)
irfw610b irfi610b.pdf
November 2001IRFW610B / IRFI610B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored t
irfi614g.pdf
PD - 95605IRFI614GPbF Lead-Free7/28/04Document Number: 91145 www.vishay.com1IRFI614GPbFDocument Number: 91145 www.vishay.com2IRFI614GPbFDocument Number: 91145 www.vishay.com3IRFI614GPbFDocument Number: 91145 www.vishay.com4IRFI614GPbFDocument Number: 91145 www.vishay.com5IRFI614GPbFDocument Number: 91145 www.vishay.com6IRFI614GPbFPeak Diode R
Datasheet: IRFI520A , IRFI520N , IRFI5210 , IRFI530A , IRFI530N , IRFI540A , IRFI540N , IRFI550A , IRFP250 , IRFI614A , IRFI614G , IRFI620A , IRFI620G , IRFI624A , IRFI624G , IRFI630A , IRFI630G .
History: HUF75309D3ST | BUZ900DP | BUZ900D
Keywords - IRFI610A MOSFET datasheet
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History: HUF75309D3ST | BUZ900DP | BUZ900D
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