AP50T10AGI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP50T10AGI
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31.3
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 100
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 34
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 38
nS
Cossⓘ - Capacitancia
de salida: 185
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.033
Ohm
Paquete / Cubierta:
TO220F
Búsqueda de reemplazo de MOSFET AP50T10AGI
Principales características: AP50T10AGI
..1. Size:165K ape
ap50t10agi.pdf 
AP50T10AGI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V RDS(ON) 33m Lower Gate Charge Fast Switching Characteristic ID 34A G RoHS Compliant & Halogen-Free S Description AP50T10A series are from Advanced Power innova
0.1. Size:56K ape
ap50t10agi-hf.pdf
AP50T10AGI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 33m Fast Switching Characteristic ID 34A G RoHS Compliant & Halogen-Free S Description AP50T10A series are from Advanced Power innovated design and silicon process technology to achieve the lowes
7.1. Size:94K ape
ap50t10gm-hf.pdf
AP50T10GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 30m Surface Mount Package ID 6.5A G Halogen Free & RoHS Compliant Product S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
7.2. Size:58K ape
ap50t10gi-hf.pdf
AP50T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz
7.3. Size:201K ape
ap50t10gh.pdf
AP50T10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37A G RoHS Compliant & Halogen-Free S Description AP50T10 series are from Advanced Power innovated design and G D S TO-252(H) silicon process technology
7.4. Size:172K ape
ap50t10gi.pdf
AP50T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8A G RoHS Compliant & Halogen-Free S Description AP50T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowes
7.5. Size:167K ape
ap50t10gs.pdf
AP50T10GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37A G RoHS Compliant & Halogen-Free S Description AP50T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest
7.6. Size:202K ape
ap50t10gh-hf ap50t10gj-hf.pdf
AP50T10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37A G RoHS Compliant & Halogen-Free S Description AP50T10 series are from Advanced Power innovated design and G D S TO-252(H) silicon process technology
7.7. Size:94K ape
ap50t10gp-hf.pdf
AP50T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedize
7.8. Size:97K ape
ap50t10gh j-hf.pdf
AP50T10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast
7.9. Size:165K ape
ap50t10gj.pdf
AP50T10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37A G RoHS Compliant & Halogen-Free S Description AP50T10 series are from Advanced Power innovated design and G D S TO-252(H) silicon process technology
7.10. Size:94K ape
ap50t10gs-hf.pdf
AP50T10GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D rug
7.11. Size:145K ape
ap50t10gp.pdf
AP50T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V RDS(ON) 30m Lower Gate Charge Fast Switching Characteristic ID 37A G RoHS Compliant & Halogen-Free S Description AP50T10 series are from Advanced Power innovate
Otros transistores... AP50WN1K5H
, AP50WN1K0I
, AP50WN1K0H
, AP50T10GS
, AP50T10GP
, AP50T10GJ
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, AP50T10GH
, 8205A
, AP50SL290DH
, AP50PN520R
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, AP4P052H
, AP4P016P
, AP4P016I
, AP4P016H
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History: NTD24N06LT4G
