AP50T10AGI Todos los transistores

 

AP50T10AGI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP50T10AGI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 34 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 185 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm
   Paquete / Cubierta: TO220F
 

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AP50T10AGI Datasheet (PDF)

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 ap50t10agi.pdf pdf_icon

AP50T10AGI

AP50T10AGI-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V RDS(ON) 33m Lower Gate Charge Fast Switching Characteristic ID 34AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10A series are from Advanced Power innova

 0.1. Size:56K  ape
 ap50t10agi-hf.pdf pdf_icon

AP50T10AGI

AP50T10AGI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 33m Fast Switching Characteristic ID 34AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10A series are from Advanced Power innovated designand silicon process technology to achieve the lowes

 7.1. Size:94K  ape
 ap50t10gm-hf.pdf pdf_icon

AP50T10AGI

AP50T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 30m Surface Mount Package ID 6.5AG Halogen Free & RoHS Compliant ProductSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

 7.2. Size:58K  ape
 ap50t10gi-hf.pdf pdf_icon

AP50T10AGI

AP50T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

MOSTRAR MÁS

Otros transistores... AP50WN1K5H , AP50WN1K0I , AP50WN1K0H , AP50T10GS , AP50T10GP , AP50T10GJ , AP50T10GI , AP50T10GH , 2SK3878 , AP50SL290DH , AP50PN520R , AP4P052J , AP4P052H , AP4P016P , AP4P016I , AP4P016H , AP4P013LES .

History: SI1028X | PMG85XP | NCE0104AN | HGW059N12S | QM3002K | PMPB47XP | MPSY65M170

 

 
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