AP50T10AGI MOSFET. Datasheet pdf. Equivalent
Type Designator: AP50T10AGI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 31.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 34 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 46 nC
trⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 185 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: TO220F
AP50T10AGI Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP50T10AGI Datasheet (PDF)
ap50t10agi.pdf
AP50T10AGI-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V RDS(ON) 33m Lower Gate Charge Fast Switching Characteristic ID 34AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10A series are from Advanced Power innova
ap50t10agi-hf.pdf
AP50T10AGI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 33m Fast Switching Characteristic ID 34AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10A series are from Advanced Power innovated designand silicon process technology to achieve the lowes
ap50t10gm-hf.pdf
AP50T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 30m Surface Mount Package ID 6.5AG Halogen Free & RoHS Compliant ProductSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
ap50t10gi-hf.pdf
AP50T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz
ap50t10gh.pdf
AP50T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated design andGDSTO-252(H)silicon process technology
ap50t10gi.pdf
AP50T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes
ap50t10gs.pdf
AP50T10GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated designand silicon process technology to achieve the lowest
ap50t10gh-hf ap50t10gj-hf.pdf
AP50T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated design andGDSTO-252(H)silicon process technology
ap50t10gp-hf.pdf
AP50T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedize
ap50t10gh j-hf.pdf
AP50T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the GDSTO-252(H)designer with the best combination of fast
ap50t10gj.pdf
AP50T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated design andGDSTO-252(H)silicon process technology
ap50t10gs-hf.pdf
AP50T10GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDrug
ap50t10gp.pdf
AP50T10GP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V RDS(ON) 30m Lower Gate Charge Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovate
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
