AP4P013LEP Todos los transistores

 

AP4P013LEP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4P013LEP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 128 nS
   Cossⓘ - Capacitancia de salida: 370 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0145 Ohm
   Paquete / Cubierta: TO220
 

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AP4P013LEP Datasheet (PDF)

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AP4P013LEP

AP4P013LEPHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50AG RoHS Compliant & Halogen-FreeSDescriptionAP4P013LE series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

 5.1. Size:176K  ape
 ap4p013les.pdf pdf_icon

AP4P013LEP

AP4P013LESHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50AG RoHS Compliant & Halogen-FreeSDescriptionAP4P013LE series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

 8.1. Size:204K  ape
 ap4p012leh.pdf pdf_icon

AP4P013LEP

AP4P012LEHHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -51AG RoHS Compliant & Halogen-FreeSDescriptionAP4P012LE series are from Advanced Power innovated design and GDsilicon process technology to achieve the

 8.2. Size:179K  ape
 ap4p016i.pdf pdf_icon

AP4P013LEP

AP4P016IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID4 -36AG RoHS Compliant & Halogen-FreeSDescriptionAP4P016 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possib

MOSTRAR MÁS

Otros transistores... AP50SL290DH , AP50PN520R , AP4P052J , AP4P052H , AP4P016P , AP4P016I , AP4P016H , AP4P013LES , IRF1010E , AP4P012LEH , AP4N4R2H , AP4N3R6P , AP4N3R6H , AP4N3R2MT , AP4N3R2I , AP4N2R6S , AP4N2R6P .

History: 4N65G-TF3T-T | 2SK3592-01SJ | DHE8004 | IPD034N06N3G | IRF7105Q | STD60NF55LT4 | OSG95R1K2PF

 

 
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