AP4P013LEP Datasheet. Specs and Replacement

Type Designator: AP4P013LEP  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 128 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm

Package: TO220

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AP4P013LEP datasheet

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AP4P013LEP

AP4P013LEP Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50A G RoHS Compliant & Halogen-Free S Description AP4P013LE series are from Advanced Power innovated design and silicon process technology to achieve the lowe... See More ⇒

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AP4P013LEP

AP4P013LES Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50A G RoHS Compliant & Halogen-Free S Description AP4P013LE series are from Advanced Power innovated design and silicon process technology to achieve the lowe... See More ⇒

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AP4P013LEP

AP4P012LEH Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -51A G RoHS Compliant & Halogen-Free S Description AP4P012LE series are from Advanced Power innovated design and G D silicon process technology to achieve the... See More ⇒

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AP4P013LEP

AP4P016I Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID4 -36A G RoHS Compliant & Halogen-Free S Description AP4P016 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possib... See More ⇒

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Detailed specifications: AP50SL290DH, AP50PN520R, AP4P052J, AP4P052H, AP4P016P, AP4P016I, AP4P016H, AP4P013LES, IRF9540N, AP4P012LEH, AP4N4R2H, AP4N3R6P, AP4N3R6H, AP4N3R2MT, AP4N3R2I, AP4N2R6S, AP4N2R6P

Keywords - AP4P013LEP MOSFET specs

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