AP4P012LEH Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4P012LEH 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 54.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 51 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 128 nS
Cossⓘ - Capacitancia de salida: 370 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm
Encapsulados: TO252
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AP4P012LEH datasheet
ap4p012leh.pdf
AP4P012LEH Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -51A G RoHS Compliant & Halogen-Free S Description AP4P012LE series are from Advanced Power innovated design and G D silicon process technology to achieve the
ap4p013les.pdf
AP4P013LES Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50A G RoHS Compliant & Halogen-Free S Description AP4P013LE series are from Advanced Power innovated design and silicon process technology to achieve the lowe
ap4p016i.pdf
AP4P016I Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID4 -36A G RoHS Compliant & Halogen-Free S Description AP4P016 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possib
ap4p016h.pdf
AP4P016H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45A G RoHS Compliant & Halogen-Free S Description G AP4P016 series are from Advanced Power innovated design and D S silicon process technology to achieve the lowes
Otros transistores... AP50PN520R, AP4P052J, AP4P052H, AP4P016P, AP4P016I, AP4P016H, AP4P013LES, AP4P013LEP, IRF4905, AP4N4R2H, AP4N3R6P, AP4N3R6H, AP4N3R2MT, AP4N3R2I, AP4N2R6S, AP4N2R6P, AP4N2R6MT
History: DHI8004 | PB544JU | HGP059N12S
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