AP4P012LEH - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP4P012LEH
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 54.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 51 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 128 ns
Cossⓘ - Выходная емкость: 370 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0135 Ohm
Тип корпуса: TO252
Аналог (замена) для AP4P012LEH
AP4P012LEH Datasheet (PDF)
ap4p012leh.pdf

AP4P012LEHHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -51AG RoHS Compliant & Halogen-FreeSDescriptionAP4P012LE series are from Advanced Power innovated design and GDsilicon process technology to achieve the
ap4p013les.pdf

AP4P013LESHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50AG RoHS Compliant & Halogen-FreeSDescriptionAP4P013LE series are from Advanced Power innovated design andsilicon process technology to achieve the lowe
ap4p016i.pdf

AP4P016IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID4 -36AG RoHS Compliant & Halogen-FreeSDescriptionAP4P016 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possib
ap4p016h.pdf

AP4P016HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionGAP4P016 series are from Advanced Power innovated design andDSsilicon process technology to achieve the lowes
Другие MOSFET... AP50PN520R , AP4P052J , AP4P052H , AP4P016P , AP4P016I , AP4P016H , AP4P013LES , AP4P013LEP , IRF4905 , AP4N4R2H , AP4N3R6P , AP4N3R6H , AP4N3R2MT , AP4N3R2I , AP4N2R6S , AP4N2R6P , AP4N2R6MT .
History: CSD18532Q5B | TMPF5N60Z | MDQ23N50DTP | AFN08N50T220T | AP9926GEM | PKCS0BB | AP9926GO
History: CSD18532Q5B | TMPF5N60Z | MDQ23N50DTP | AFN08N50T220T | AP9926GEM | PKCS0BB | AP9926GO



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