AP4P012LEH Spec and Replacement
Type Designator: AP4P012LEH
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 54.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 51 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 128 nS
Cossⓘ - Output Capacitance: 370 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: TO252
AP4P012LEH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP4P012LEH Specs
ap4p012leh.pdf
AP4P012LEH Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -51A G RoHS Compliant & Halogen-Free S Description AP4P012LE series are from Advanced Power innovated design and G D silicon process technology to achieve the... See More ⇒
ap4p013les.pdf
AP4P013LES Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50A G RoHS Compliant & Halogen-Free S Description AP4P013LE series are from Advanced Power innovated design and silicon process technology to achieve the lowe... See More ⇒
ap4p016i.pdf
AP4P016I Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID4 -36A G RoHS Compliant & Halogen-Free S Description AP4P016 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possib... See More ⇒
ap4p016h.pdf
AP4P016H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45A G RoHS Compliant & Halogen-Free S Description G AP4P016 series are from Advanced Power innovated design and D S silicon process technology to achieve the lowes... See More ⇒
Detailed specifications: AP50PN520R , AP4P052J , AP4P052H , AP4P016P , AP4P016I , AP4P016H , AP4P013LES , AP4P013LEP , IRF4905 , AP4N4R2H , AP4N3R6P , AP4N3R6H , AP4N3R2MT , AP4N3R2I , AP4N2R6S , AP4N2R6P , AP4N2R6MT .
Keywords - AP4P012LEH MOSFET specs
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