IRFI634G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFI634G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: TO220F

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IRFI634G Datasheet (PDF)

..1. Size:283K international rectifier
irfi634g.pdf

PD - 95608IRFI634GPbF Lead-Free7/29/04Document Number: 91149 www.vishay.com1IRFI634GPbFDocument Number: 91149 www.vishay.com2IRFI634GPbFDocument Number: 91149 www.vishay.com3IRFI634GPbFDocument Number: 91149 www.vishay.com4IRFI634GPbFDocument Number: 91149 www.vishay.com5IRFI634GPbFDocument Number: 91149 www.vishay.com6IRFI634GPbFTO-220 Full-

..2. Size:1106K vishay
irfi634g sihfi634g.pdf

IRFI634G, SiHFI634GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 250 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.45f = 60 Hz)RoHS*Qg (Max.) (nC) 41 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 6.5 Dynamic dV/dt Rating Low Thermal ResistanceQgd (nC) 22 Lead (Pb)-fre

7.1. Size:214K 1
irfi634a irfw634a.pdf

8.1. Size:215K 1
irfi630a irfw630a.pdf

8.2. Size:927K international rectifier
irfi630g.pdf

PD - 94846IRFI630GPbF Lead-Free11/14/03Document Number: 91148 www.vishay.com1IRFI630GPbFDocument Number: 91148 www.vishay.com2IRFI630GPbFDocument Number: 91148 www.vishay.com3IRFI630GPbFDocument Number: 91148 www.vishay.com4IRFI630GPbFDocument Number: 91148 www.vishay.com5IRFI630GPbFDocument Number: 91148 www.vishay.com6IRFI630GPbFTO-220 Full

8.3. Size:712K fairchild semi
irfw630b irfi630b.pdf

IRFW630B / IRFI630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switc

8.4. Size:1541K vishay
irfi630g sihfi630g.pdf

IRFI630G, SiHFI630GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.40f = 60 Hz)RoHS*Qg (Max.) (nC) 43COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Low Thermal ResistanceConfiguration S

Otros transistores... IRFI614G , IRFI620A , IRFI620G , IRFI624A , IRFI624G , IRFI630A , IRFI630G , IRFI634A , 8N60 , IRFI640A , IRFI640G , IRFI644A , IRFI644G , IRFI710A , IRFI720A , IRFI720G , IRFI730A .

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