IRFI634G
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFI634G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 5.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 41(max)
nC
trⓘ - Rise Time: 21
nS
Cossⓘ -
Output Capacitance: 190
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45
Ohm
Package:
TO220F
IRFI634G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFI634G
Datasheet (PDF)
..1. Size:283K international rectifier
irfi634g.pdf
PD - 95608IRFI634GPbF Lead-Free7/29/04Document Number: 91149 www.vishay.com1IRFI634GPbFDocument Number: 91149 www.vishay.com2IRFI634GPbFDocument Number: 91149 www.vishay.com3IRFI634GPbFDocument Number: 91149 www.vishay.com4IRFI634GPbFDocument Number: 91149 www.vishay.com5IRFI634GPbFDocument Number: 91149 www.vishay.com6IRFI634GPbFTO-220 Full-
..2. Size:1106K vishay
irfi634g sihfi634g.pdf
IRFI634G, SiHFI634GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 250 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.45f = 60 Hz)RoHS*Qg (Max.) (nC) 41 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 6.5 Dynamic dV/dt Rating Low Thermal ResistanceQgd (nC) 22 Lead (Pb)-fre
8.2. Size:927K international rectifier
irfi630g.pdf
PD - 94846IRFI630GPbF Lead-Free11/14/03Document Number: 91148 www.vishay.com1IRFI630GPbFDocument Number: 91148 www.vishay.com2IRFI630GPbFDocument Number: 91148 www.vishay.com3IRFI630GPbFDocument Number: 91148 www.vishay.com4IRFI630GPbFDocument Number: 91148 www.vishay.com5IRFI630GPbFDocument Number: 91148 www.vishay.com6IRFI630GPbFTO-220 Full
8.3. Size:712K fairchild semi
irfw630b irfi630b.pdf
IRFW630B / IRFI630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switc
8.4. Size:1541K vishay
irfi630g sihfi630g.pdf
IRFI630G, SiHFI630GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.40f = 60 Hz)RoHS*Qg (Max.) (nC) 43COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Low Thermal ResistanceConfiguration S
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