IRFI634G - Даташиты. Аналоги. Основные параметры

PD - 95608IRFI634GPbF Lead-Free7/29/04Document Number: 91149 www.vishay.com1IRFI634GPbFDocument Number: 91149 www.vishay.com2IRFI634GPbFDocument Number: 91149 www.vishay.com3IRFI634GPbFDocument Number: 91149 www.vishay.com4IRFI634GPbFDocument Number: 91149 www.vishay.com5IRFI634GPbFDocument Number: 91149 www.vishay.com6IRFI634GPbFTO-220 Full-

IRFI634G, SiHFI634GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 250 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.45f = 60 Hz)RoHS*Qg (Max.) (nC) 41 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 6.5 Dynamic dV/dt Rating Low Thermal ResistanceQgd (nC) 22 Lead (Pb)-fre

PD - 94846IRFI630GPbF Lead-Free11/14/03Document Number: 91148 www.vishay.com1IRFI630GPbFDocument Number: 91148 www.vishay.com2IRFI630GPbFDocument Number: 91148 www.vishay.com3IRFI630GPbFDocument Number: 91148 www.vishay.com4IRFI630GPbFDocument Number: 91148 www.vishay.com5IRFI630GPbFDocument Number: 91148 www.vishay.com6IRFI630GPbFTO-220 Full

IRFW630B / IRFI630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switc

IRFI630G, SiHFI630GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.40f = 60 Hz)RoHS*Qg (Max.) (nC) 43COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Low Thermal ResistanceConfiguration S