AP10TN008CMT-L Todos los transistores

 

AP10TN008CMT-L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP10TN008CMT-L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 42 nS

Cossⓘ - Capacitancia de salida: 590 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0079 Ohm

Encapsulados: PMPAK5X6L

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AP10TN008CMT-L datasheet

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 ap10tn008cmt-l.pdf pdf_icon

AP10TN008CMT-L

AP10TN008CMT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 7.9m Ultra Low On-resistance ID 75A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN008C series are from Advanced Power innovated design and silicon process technology to achie

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AP10TN008CMT-L

AP10TN008CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 7.9m Ultra Low On-resistance ID 75A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN008C series are from Advanced Power innovated design and silicon process technology to achieve

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 ap10tn004cmt.pdf pdf_icon

AP10TN008CMT-L

AP10TN004CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004C series are from Advanced Power innovated design and silicon process technolog

 6.2. Size:163K  ape
 ap10tn004lcmt.pdf pdf_icon

AP10TN008CMT-L

AP10TN004LCMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 4.8m Ultra Low On-resistance ID5 105A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004LC series are from Advanced Power innovated design and silicon process technology to ach

MOSTRAR MÁS

Otros transistores... AP10TN004LCMT , AP10TN004CMT , AP10N012MT , AP0904GMT , AP0704GMT , AP0504GMT , AP0203GMT , AP3N2R2MT-L , 2N7002 , AP0203GMT-L , AP3P7R0EP , AP3N4R0P , AP3N2R8P , AP3N1R8P , AP3N020P , AP3P7R0EI , AP3N4R0J .

History: JMH65R980AF | IRF720SPBF | 2SK3111 | MMN400A006U1 | IRF7313PBF-1

 

 

 

 

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