AP10TN008CMT-L Todos los transistores

 

AP10TN008CMT-L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP10TN008CMT-L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 590 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0079 Ohm
   Paquete / Cubierta: PMPAK5X6L
 

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AP10TN008CMT-L Datasheet (PDF)

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AP10TN008CMT-L

AP10TN008CMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 7.9m Ultra Low On-resistance ID 75AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN008C series are from Advanced Power innovated designand silicon process technology to achie

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AP10TN008CMT-L

AP10TN008CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 7.9m Ultra Low On-resistance ID 75AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN008C series are from Advanced Power innovated designand silicon process technology to achieve

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ap10tn004cmt.pdf pdf_icon

AP10TN008CMT-L

AP10TN004CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN004C series are from Advanced Power innovated designand silicon process technolog

 6.2. Size:163K  ape
ap10tn004lcmt.pdf pdf_icon

AP10TN008CMT-L

AP10TN004LCMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 4.8m Ultra Low On-resistance ID5 105AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN004LC series are from Advanced Power innovated designand silicon process technology to ach

Otros transistores... AP10TN004LCMT , AP10TN004CMT , AP10N012MT , AP0904GMT , AP0704GMT , AP0504GMT , AP0203GMT , AP3N2R2MT-L , K4145 , AP0203GMT-L , AP3P7R0EP , AP3N4R0P , AP3N2R8P , AP3N1R8P , AP3N020P , AP3P7R0EI , AP3N4R0J .

History: CJ3139KDW | CEB6060N | FDS5170N7 | IXTQ96N15P

 

 
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