AP10TN008CMT-L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP10TN008CMT-L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 590 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0079 Ohm
   Paquete / Cubierta: PMPAK5X6L

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AP10TN008CMT-L Datasheet (PDF)

..1. Size:317K ape
ap10tn008cmt-l.pdf

AP10TN008CMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 7.9m Ultra Low On-resistance ID 75AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN008C series are from Advanced Power innovated designand silicon process technology to achie

2.1. Size:162K ape
ap10tn008cmt.pdf

AP10TN008CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 7.9m Ultra Low On-resistance ID 75AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN008C series are from Advanced Power innovated designand silicon process technology to achieve

6.1. Size:161K ape
ap10tn004cmt.pdf

AP10TN004CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN004C series are from Advanced Power innovated designand silicon process technolog

6.2. Size:163K ape
ap10tn004lcmt.pdf

AP10TN004LCMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 4.8m Ultra Low On-resistance ID5 105AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN004LC series are from Advanced Power innovated designand silicon process technology to ach

6.3. Size:206K ape
ap10tn003p.pdf

AP10TN003PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 3m Fast Switching Characteristic ID4 200AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are are from Advanced innovated designAP10TN003 series from Advanced Power Power inno

6.4. Size:218K ape
ap10tn003i.pdf

AP10TN003IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 3m Ultra Low On-resistance ID4 80AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are are from Advanced innovated designAP10TN003 series from Advanced Power Power innovated

6.5. Size:209K ape
ap10tn003r.pdf

AP10TN003RHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 3m Fast Switching Characteristic ID4 200AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are are from Advanced innovated designAP10TN003 series from Advanced Power Power inno

6.6. Size:217K ape
ap10tn003s.pdf

AP10TN003SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 3m Ultra Low On-resistance ID4 200AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are are from Advanced innovated designAP10TN003 series from Advanced Power Power innovated

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