AP10TN008CMT-L - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP10TN008CMT-L
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 18.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 42 ns
Cossⓘ - Выходная емкость: 590 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0079 Ohm
Тип корпуса: PMPAK5X6L
Аналог (замена) для AP10TN008CMT-L
AP10TN008CMT-L Datasheet (PDF)
ap10tn008cmt-l.pdf
AP10TN008CMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 7.9m Ultra Low On-resistance ID 75AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN008C series are from Advanced Power innovated designand silicon process technology to achie
ap10tn008cmt.pdf
AP10TN008CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 7.9m Ultra Low On-resistance ID 75AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN008C series are from Advanced Power innovated designand silicon process technology to achieve
ap10tn004cmt.pdf
AP10TN004CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN004C series are from Advanced Power innovated designand silicon process technolog
ap10tn004lcmt.pdf
AP10TN004LCMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 4.8m Ultra Low On-resistance ID5 105AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN004LC series are from Advanced Power innovated designand silicon process technology to ach
Другие MOSFET... AP10TN004LCMT , AP10TN004CMT , AP10N012MT , AP0904GMT , AP0704GMT , AP0504GMT , AP0203GMT , AP3N2R2MT-L , 2N7002 , AP0203GMT-L , AP3P7R0EP , AP3N4R0P , AP3N2R8P , AP3N1R8P , AP3N020P , AP3P7R0EI , AP3N4R0J .
History: SE4607 | 2SK3652 | JMPL1025AE | SSI7N60B | SWP630D | SKQ55P02AD
History: SE4607 | 2SK3652 | JMPL1025AE | SSI7N60B | SWP630D | SKQ55P02AD
Список транзисторов
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