AP10TN008CMT-L MOSFET. Datasheet pdf. Equivalent
Type Designator: AP10TN008CMT-L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 18.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 72 nC
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 590 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm
Package: PMPAK5X6L
AP10TN008CMT-L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP10TN008CMT-L Datasheet (PDF)
ap10tn008cmt-l.pdf
AP10TN008CMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 7.9m Ultra Low On-resistance ID 75AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN008C series are from Advanced Power innovated designand silicon process technology to achie
ap10tn008cmt.pdf
AP10TN008CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 7.9m Ultra Low On-resistance ID 75AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN008C series are from Advanced Power innovated designand silicon process technology to achieve
ap10tn004cmt.pdf
AP10TN004CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN004C series are from Advanced Power innovated designand silicon process technolog
ap10tn004lcmt.pdf
AP10TN004LCMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 4.8m Ultra Low On-resistance ID5 105AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN004LC series are from Advanced Power innovated designand silicon process technology to ach
ap10tn003p.pdf
AP10TN003PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 3m Fast Switching Characteristic ID4 200AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are are from Advanced innovated designAP10TN003 series from Advanced Power Power inno
ap10tn003i.pdf
AP10TN003IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 3m Ultra Low On-resistance ID4 80AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are are from Advanced innovated designAP10TN003 series from Advanced Power Power innovated
ap10tn003r.pdf
AP10TN003RHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 3m Fast Switching Characteristic ID4 200AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are are from Advanced innovated designAP10TN003 series from Advanced Power Power inno
ap10tn003s.pdf
AP10TN003SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 3m Ultra Low On-resistance ID4 200AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are are from Advanced innovated designAP10TN003 series from Advanced Power Power innovated
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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